Characteristics of self-induced lightly-doped-drain polycrystalline silicon thin film transistors with liquid-phase deposition SiO/sub 2/ as gate-insulator and passivation-layer
1995 ◽
Vol 42
(2)
◽
pp. 307-314
◽
Keyword(s):
2007 ◽
Vol 46
(3B)
◽
pp. 1322-1327
◽
2008 ◽
Vol 47
(2)
◽
pp. 847-852
◽
Keyword(s):
2013 ◽
Vol 52
(10S)
◽
pp. 10MC13
◽
Keyword(s):
1995 ◽
Vol 42
(11)
◽
pp. 1918-1923
◽
Keyword(s):
Keyword(s):
1993 ◽
Vol 32
(Part 1, No. 1B)
◽
pp. 469-473
◽
Keyword(s):