Finite element simulation of a stress history during the manufacturing process of thin film stacks in VLSI structures

1998 ◽  
Vol 11 (3) ◽  
pp. 458-464 ◽  
Author(s):  
J. Lee ◽  
A.S. Mack
CrystEngComm ◽  
2019 ◽  
Vol 21 (36) ◽  
pp. 5402-5409
Author(s):  
Ying Zhang ◽  
Cong Zhang ◽  
Dacheng Wei ◽  
Xue Bai ◽  
Xiangfan Xu

Combining a scanning thermal microscope with a finite element simulation, the conductivity of an organic thin-film can be quantitatively detected.


1994 ◽  
Vol 356 ◽  
Author(s):  
S.A. Syed Asif ◽  
B. Derby ◽  
S.G. Roberts

AbstractFinite element simulation of the nanoindentation process has been carried out to investigate the nanomechanical response of materials and thin film systems. The influence of the geometry of the indenter, friction between the indenter and the surface, and pre-stress in the film, on the nanomechanical response have all been investigated. The effect of pile-up on the contact area calculation and the problems which occur with the commonly used methods in calculating the contact area have been studied. Results shows considerable error in calculating the contact area which depends on the indentation conditions used for the simulation. Simulation results suggest, that the influence of residual stress on hardness response is material sensitive.


Solar Energy ◽  
2014 ◽  
Vol 105 ◽  
pp. 494-504 ◽  
Author(s):  
Frank W. Fecher ◽  
Alexander Pérez Romero ◽  
Christoph J. Brabec ◽  
Claudia Buerhop-Lutz

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