Design criteria for highly-efficient operation of 1.3-/spl mu/m InP-based strained-layer multiple-quantum-well lasers at elevated temperatures

1995 ◽  
Vol 7 (8) ◽  
pp. 839-841 ◽  
Author(s):  
S. Seki ◽  
H. Oohashi ◽  
H. Sugiura ◽  
T. Hirono ◽  
K. Yokoyama
Keyword(s):  
Quantum Well ◽  
Elevated Temperatures ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Design Criteria ◽  
Multiple Quantum ◽  
Efficient Operation ◽  
Strained Layer ◽  
Highly Efficient

Pure strain effects in strained-layer multiple-quantum-well lasers

1992 ◽  
Vol 4 (8) ◽  
pp. 826-828 ◽  
Author(s):  
H. Yasaka ◽  
R. Iga ◽  
Y. Noguchi ◽  
Y. Yoshikuni
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Pure Strain ◽  
Strain Effects ◽  
Strained Layer

Submilliampere-threshold 1.5- mu m strained-layer multiple quantum well lasers

1990 ◽  
Vol 2 (12) ◽  
pp. 852-853 ◽  
Author(s):  
C.E. Zah ◽  
F.J. Favire ◽  
R. Bhat ◽  
S.G. Menocal ◽  
N.C. Andreadakis ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Strained Layer

Strained-layer 1.5 μm wavelength InGaAs/InP multiple quantum well lasers grown by chemical beam epitaxy

1990 ◽  
Vol 26 (24) ◽  
pp. 2035 ◽  
Author(s):  
W.T. Tsang ◽  
M.C. Wu ◽  
L. Yang ◽  
Y.K. Chen ◽  
A.M. Sergent
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Chemical Beam Epitaxy ◽  
Strained Layer
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