Low‐threshold 1.3‐μm wavelength, InGaAsP strained‐layer multiple quantum well lasers grown by gas source molecular beam epitaxy

1994 ◽  
Vol 65 (7) ◽  
pp. 892-894 ◽  
Author(s):  
Guang‐Jye Shiau ◽  
Chih‐Ping Chao ◽  
Paul E. Burrows ◽  
Stephen R. Forrest
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Strained Layer ◽  
Gas Source ◽  
Low Threshold

InGaAs/GaAs/InGaP multiple‐quantum‐well lasers prepared by gas‐source molecular beam epitaxy

1991 ◽  
Vol 59 (22) ◽  
pp. 2781-2783 ◽  
Author(s):  
J. M. Kuo ◽  
Y. K. Chen ◽  
M. C. Wu ◽  
M. A. Chin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Gas Source

Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire

2010 ◽  
Vol 96 (14) ◽  
pp. 141112 ◽  
Author(s):  
V. N. Jmerik ◽  
A. M. Mizerov ◽  
A. A. Sitnikova ◽  
P. S. Kop’ev ◽  
S. V. Ivanov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Low Threshold
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