Using Internal Quantum Efficiency to Determine Front Surface Recombination Velocity of Crystalline Silicon Solar Cells

2010 ◽  
Author(s):  
Xun Ma ◽  
Zuming Liu ◽  
Hua Liao ◽  
Jintian Li
Keyword(s):  
Solar Cells ◽  
Quantum Efficiency ◽  
Crystalline Silicon ◽  
Internal Quantum Efficiency ◽  
Surface Recombination ◽  
Front Surface ◽  
Surface Recombination Velocity ◽  
Silicon Solar Cells ◽  
Crystalline Silicon Solar Cells ◽  
Recombination Velocity

Non-Destructive Method for Simultaneous Mapping of Diffusion Length and Surface Recombination Velocity

1995 ◽  
Vol 378 ◽  
Author(s):  
Hans-Christoph Ostendorf ◽  
Arthur L. Endrös
Keyword(s):  
Diffusion Length ◽  
Crystalline Silicon ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Silicon Solar Cells ◽  
Crystalline Silicon Solar Cells ◽  
Recombination Velocity ◽  
Non Destructive ◽  
Penetration Depths ◽  
Main Material

AbstractBulk and surface recombination are the main material parameters that determine the performance of crystalline silicon solar cells. We present a new method for the nondestructive, simultaneous mapping of the diffusion length and the surface recombination velocity of a silicon wafer. The method uses the hardware of the electrolytical metal tracer (ELYMAT). The separation between bulk and surface recombination is achieved by illuminating the sample with laser beams of two different colors. By solving the diffusion equation for both laser penetration depths the diffusion length and the surface recombination velocity can be calculated from the measured diffusion currents. First experiments are presented which show the basic feasibility of the method.

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