The Schottky barrier detectors based on 4H-SiC epitaxial layer

Author(s):  
B. Zat'ko ◽  
A. Sagatova ◽  
L. Hrubcin ◽  
P. Bohacek ◽  
E. Kovacova ◽  
...  
2021 ◽  
Vol 536 ◽  
pp. 147801
Author(s):  
Bohumír Zaťko ◽  
Ladislav Hrubčín ◽  
Andrea Šagátová ◽  
Jozef Osvald ◽  
Pavol Boháček ◽  
...  

2003 ◽  
Vol 798 ◽  
Author(s):  
Atsushi Motogaito ◽  
Kazumasa Hiramatsu ◽  
Yasuhiro Shibata ◽  
Hironobu Watanabe ◽  
Hideto Miyake ◽  
...  

ABSTRACTCharacterizations of transparent Schottky barrier GaN and AlGaN UV detectors in the vacuum UV (VUV) and soft X-ray (SX) region using synchrotron radiation are described. In the GaN UV detectors, the responsivity achieved about 0.05 A/W at 95 eV (13 nm). Thus, their device performance is shown between 3.4 and 100 eV (10 and 360 nm). Furthermore, the high responsivity spectra were realized by using AlGaN Schottky UV detectors consisting of Al0.5Ga0.5N on AlN epitaxial layer.


2018 ◽  
Vol 461 ◽  
pp. 276-280 ◽  
Author(s):  
B. Zaťko ◽  
L. Hrubčín ◽  
A. Šagátová ◽  
J. Osvald ◽  
P. Boháček ◽  
...  

1989 ◽  
Author(s):  
T. S. Villani ◽  
W. F. Kosonocky ◽  
F. V. Shallcross ◽  
J. V. Groppe ◽  
G. M. Meray ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document