ChemInform Abstract: HALL EFFECTS, SCHOTTKY BARRIER CAPACITANCE, AND PHOTOLUMINESCENCE SPECTRA MEASUREMENTS FOR GAAS EPITAXIAL LAYER AND THEIR CORRELATION

1974 ◽  
Vol 5 (47) ◽  
pp. no-no
Author(s):  
T. KATODA ◽  
T. SUGANO
Keyword(s):  
Schottky Barrier ◽  
Epitaxial Layer ◽  
Photoluminescence Spectra ◽  
Hall Effects ◽  
Barrier Capacitance ◽  
Gaas Epitaxial Layer

Characterization of III-nitride Based Schottky UV Detectors with Wide Detectable Wavelength Range (360–10 nm) using Synchrotron Radiation

2003 ◽  
Vol 798 ◽  
Author(s):  
Atsushi Motogaito ◽  
Kazumasa Hiramatsu ◽  
Yasuhiro Shibata ◽  
Hironobu Watanabe ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Wavelength Range ◽  
Epitaxial Layer ◽  
Device Performance ◽  
Uv Detectors ◽  
X Ray ◽  
High Responsivity ◽  
Vacuum Uv

ABSTRACTCharacterizations of transparent Schottky barrier GaN and AlGaN UV detectors in the vacuum UV (VUV) and soft X-ray (SX) region using synchrotron radiation are described. In the GaN UV detectors, the responsivity achieved about 0.05 A/W at 95 eV (13 nm). Thus, their device performance is shown between 3.4 and 100 eV (10 and 360 nm). Furthermore, the high responsivity spectra were realized by using AlGaN Schottky UV detectors consisting of Al0.5Ga0.5N on AlN epitaxial layer.

Submicron GaAs Epitaxial Layer from Diethylgalliumchloride and Arsine

1976 ◽  
Vol 123 (8) ◽  
pp. 1227-1231 ◽  
Author(s):  
Yoshiro Nakayama ◽  
Shinji Ohkawa ◽  
Hisao Hashimoto ◽  
Hajime Ishikawa
Keyword(s):  
Epitaxial Layer ◽  
Gaas Epitaxial Layer
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