Defect-induced broadband photodetection of layered γ-In2Se3 nanofilm and its application in near infrared image sensors

We report on the synthesis of layered γ-In2Se3 nanofilm for broadband photodetector and near infrared light image sensing applications.

Oxygen Atmosphere Annealing Effect on the Thermal Stability of TiO2-x Based Films for Shutter-Less Infrared Image Sensors

In the present study, we examine the thermal stability of TiO2-x (TiO) and Nb:TiO2-x (TNO) films at different exposing temperatures for the as-deposited and oxygen-atmosphere annealed samples. In order to attain the good thermal stability characteristics, lower resistance of the TiO and TNO samples were annealed in oxygen gas atmosphere at a high flow rate (5 lit/min) of oxygen gas and annealing time (25 min). From the structural studies, it can be confirmed that the annealing process gives the incorporation of oxygen atoms to its vacant sites and the phase transition improvement from the amorphous to rutile structure. The annealed samples reveal the high resistivity and temperature coefficient of resistance (TCR) values than as-deposited samples. Furthermore, it was confirmed that the annealed samples exhibits a significant improvement of thermal stability compared to the as-deposited samples. As a result, the annealed TNO sample exhibits outstanding thermal stability as well as better bolometric performance. Consequently, this study reveals that the annealed TNO sample is appropriate for shutter-less infrared image sensor devices.

Update of Single Event Effects Radiation Hardness Assurance of Readout Integrated Circuit of Infrared Image Sensors at Cryogenic Temperature

This paper review presents Single Event Effects (SEE) irradiation tests under heavy ions of the test-chip of D-Flip-Flop (DFF) cells and complete readout integrated circuits (ROIC) as a function of temperature, down to 50 K. The analyses of the experimental data are completed using the SEE prediction tool MUSCA SEP3. The conclusions derived from the experimental measurements and related analyses allow to update the current SEE radiation hardness assurance (RHA) for readout integrated circuits of infrared image sensors used at cryogenic temperatures. The current RHA update is performed on SEE irradiation tests at room temperature, as opposed to the operational cryogenic temperature. These tests include SET (Single Event Transient), SEU (Single Event Upset) and SEFI (Single Event Functional Interrupt) irradiation tests. This update allows for reducing the cost of ROIC qualifications and the test setup complexity for each space mission.