A 135–150 GHz frequency quadrupler with 0.5 dBm peak output power in 55 nm SiGe BiCMOS technology

Author(s):  
Alice Bossuet ◽  
Thomas Quemerais ◽  
Sylvie Lepilliet ◽  
Jean-Michel Fournier ◽  
Estelle Lauga-Larroze ◽  
...  
2019 ◽  
Vol 30 ◽  
pp. 01006
Author(s):  
Alexander Kozhemyakin ◽  
Ivan Kravchenko

The paper presents design flow and simulation results of the W-band fundamental voltage-controlled oscillator in 0.13 μm SiGe BiCMOS technology for an automotive radar application. Oscillator provides fundamental oscillation range of 76.8 GHz to 81.2 GHz. According to simulation results phase noise is –89.3 dBc/Hz at 1 MHz offset, output power is –5.6 dBm and power consumption is 39 mW from 3.3 V source.


2017 ◽  
Vol 9 (6) ◽  
pp. 1231-1239
Author(s):  
Faisal Ahmed ◽  
Muhammad Furqan ◽  
Klaus Aufinger ◽  
Andreas Stelzer

This paper presents the design and measurement results of a high-gain D-band broadband power amplifier (PA) implemented in a 130 nm SiGe BiCMOS technology. The topology of the PA is based on four differential cascode stages with interstage matching networks. A detailed analysis of the frequency behavior of the transimpedance-gain of the common-base stage of the cascode is presented by means of small-signal equivalent circuits, when the proposed four-reactance wideband matching network is used for output matching to the subsequent stage. The effect of the size of the active devices, in achieving a desired gain, bandwidth, and output power, is investigated. The fabricated D-band amplifier is characterized on-wafer demonstrating a peak differential gain and output power of about 25 dB and 11 dBm, respectively, while utilizing a DC power of 262 mW from a 2.7 V supply. The 3-dB small-signal bandwidth of the PA spans from 100 to 180 GHz (limited by the measurement setup), making it the first SiGe-based PA to cover the entire D-band frequency range. The PA achieves a state-of-the-art differential gain-bandwidth product of around 1.4 THz and the highest GBW/PDCratio of 5.2 GHz/mW among all D-Band Si-based PAs.


2020 ◽  
Vol 63 (12) ◽  
Author(s):  
Peigen Zhou ◽  
Jixin Chen ◽  
Pinpin Yan ◽  
Zhigang Peng ◽  
Debin Hou ◽  
...  

2012 ◽  
Vol 22 (4) ◽  
pp. 191-193 ◽  
Author(s):  
Debin Hou ◽  
Yong-Zhong Xiong ◽  
Wang-Ling Goh ◽  
Wei Hong ◽  
Mohammad Madihian

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