A 103-GHz Voltage Controlled Oscillator with 28% Tuning Range and 4.2 dBm Peak Output Power Using SiGe BiCMOS Technology

2018 ◽  
Author(s):  
Kefei Wu ◽  
Mona Hella
Keyword(s):  
Output Power ◽  
Tuning Range ◽  
Voltage Controlled Oscillator ◽  
Peak Output Power ◽  
Bicmos Technology ◽  
Sige Bicmos

scholarly journals W-band voltage-controlled oscillator design in 130 nm SiGe BiCMOS technology

2019 ◽  
Vol 30 ◽  
pp. 01006
Author(s):  
Alexander Kozhemyakin ◽  
Ivan Kravchenko
Keyword(s):  
Power Consumption ◽  
Output Power ◽  
Design Flow ◽  
Voltage Controlled Oscillator ◽  
Automotive Radar ◽  
W Band ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Fundamental Oscillation ◽  
Simulation Results

The paper presents design flow and simulation results of the W-band fundamental voltage-controlled oscillator in 0.13 μm SiGe BiCMOS technology for an automotive radar application. Oscillator provides fundamental oscillation range of 76.8 GHz to 81.2 GHz. According to simulation results phase noise is –89.3 dBc/Hz at 1 MHz offset, output power is –5.6 dBm and power consumption is 39 mW from 3.3 V source.

A LOW POWER PUSH–PUSH VCO USING MULTI-COUPLED LC TANKS

2013 ◽  
Vol 22 (10) ◽  
pp. 1340035
Author(s):  
MAHALINGAM NAGARAJAN ◽  
KAIXUE MA ◽  
KIAT SENG YEO ◽  
WEI MENG LIM
Keyword(s):  
Phase Noise ◽  
Tuning Range ◽  
Frequency Tuning ◽  
Voltage Controlled Oscillator ◽  
Fully Integrated ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Large Tuning Range ◽  
Low Phase Noise ◽  
Lc Tanks

A fully integrated push–push voltage controlled oscillator (VCO) working in K-band with a large tuning range and a low phase noise fabricated in a 0.18 μm SiGe BiCMOS technology is presented. Multi-coupled LC tanks are used to improve the tuning range, power consumption and phase noise. Digital tuning varactors are used to maintain a low VCO tuning sensitivity (K VCO ) and maximum frequency overlap. The VCO achieves a frequency tuning range (FTR) of 17% at 12 GHz, a phase noise of -106.62 dBc/Hz at 1 MHz offset and consumes 7 mW from 1.8 V supply.

A 135–150 GHz frequency quadrupler with 0.5 dBm peak output power in 55 nm SiGe BiCMOS technology

2015 ◽  
Author(s):  
Alice Bossuet ◽  
Thomas Quemerais ◽  
Sylvie Lepilliet ◽  
Jean-Michel Fournier ◽  
Estelle Lauga-Larroze ◽  
...  
Keyword(s):  
Output Power ◽  
Peak Output Power ◽  
Bicmos Technology ◽  
Sige Bicmos
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