Influence of local field distortion by high permittivity fillers on surface electric field of layered permittivity graded material

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.

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Overview of Surface-Volume-Surface Electric Field Integral Equation Formulations for 3-D Composite Metal-Dielectric Objects

2020 14th European Conference on Antennas and Propagation (EuCAP) ◽

10.23919/eucap48036.2020.9135784 ◽

2020 ◽

Author(s):

Reza Gholami ◽

Shucheng Zheng ◽

Vladimir Okhmatovski

Keyword(s):

Integral Equation ◽

Electric Field ◽

Electric Field Integral Equation ◽

Surface Electric Field ◽

Dielectric Objects ◽

Field Integral

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Influence of pollution and defects on the surface electric field distribution of overhead line HV composite insulator

2020 IEEE Conference on Electrical Insulation and Dielectric Phenomena (CEIDP) ◽

10.1109/ceidp49254.2020.9437495 ◽

2020 ◽

Author(s):

Y. Yahoui ◽

J. Castellon ◽

S. Agnel ◽

C. Pons

Keyword(s):

Electric Field ◽

Field Distribution ◽

Electric Field Distribution ◽

Overhead Line ◽

Composite Insulator ◽

Surface Electric Field

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Quantification of solute deuterium in titanium deuteride by atom probe tomography with both laser pulsing and high-voltage pulsing: influence of the surface electric field

New Journal of Physics ◽

10.1088/1367-2630/ab1c3b ◽

2019 ◽

Vol 21 (5) ◽

pp. 053025 ◽

Cited By ~ 7

Author(s):

Y H Chang ◽

I Mouton ◽

L Stephenson ◽

M Ashton ◽

G K Zhang ◽

...

Keyword(s):

Electric Field ◽

High Voltage ◽

Atom Probe Tomography ◽

Atom Probe ◽

Titanium Deuteride ◽

Surface Electric Field

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Application of functionally graded material for reducing electric field on electrode and spacer interface

IEEE Transactions on Dielectrics and Electrical Insulation ◽

10.1109/tdei.2010.5412025 ◽

2010 ◽

Vol 17 (1) ◽

pp. 256-263 ◽

Cited By ~ 74

Author(s):

Muneaki Kurimoto ◽

Katsumi Kato ◽

Masahiro Hanai ◽

Yoshikazu Hoshina ◽

Masafumi Takei ◽

...

Keyword(s):

Electric Field ◽

Functionally Graded Material ◽

Functionally Graded ◽

Graded Material

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Study of electric field stress on the surface contour and at the triple junction in three phase GIS with FGM spacer under the depression defect

International Journal of Emerging Electric Power Systems ◽

10.1515/ijeeps-2020-0080 ◽

2020 ◽

Vol 0 (0) ◽

Author(s):

Janaki Pakalapati ◽

Venkata N. Kumar Gundavarapu ◽

Deepak Chowdary Duvvada ◽

Sravana Kumar Bali

Keyword(s):

Electric Field ◽

Triple Junction ◽

Dielectric Strength ◽

Functionally Graded ◽

Uniform Electric Field ◽

Filler Materials ◽

Field Stress ◽

As Doping ◽

Three Phase ◽

Graded Material

AbstractNow days, the establishment of spacers is in wide usage in three-phase Gas Insulated Busduct (GIB) for providing mechanical support and better insulation to the conductors. The region of the intersection of SF6 gas, enclosure end and the spacer is one of the weakest links in GIB, so the major concentration is done on minimization of electric field stress at this junction by using Functionally Graded Material (FGM) technique. The other incidents of insulation failures are due to several defects like depression, delamination etc. reduces the dielectric strength of the spacers. In this paper, an FGM post type spacer has been designed for a three-phase GIB under depression and further electric field stress at Triple Junction (TJ) is reduced by introducing a metal insert (MI) nearer to the TJ. Several filler materials are used as doping materials for obtaining different permittivity values using FGM technique to achieve uniform electric field stress. Simulation is carried out for the designed spacer at various operating voltages with different types of FGM gradings. The effect of depression with different dimensions and positions is analyzed before and after inserting MI to the FGM post type spacer in three-phase GIB.

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