Using analog behavioral modeling in PSpice for the implementation of subcircuit-models of power devices

6th IEEE Power Electronics Congress. Technical Proceedings. CIEP 98 (Cat. No.98TH8375) ◽

10.1109/ciep.1998.750677 ◽

2002 ◽

Author(s):

M. Cotorogea

Keyword(s):

Behavioral Modeling ◽

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RF Power Amplifier Behavioral Modeling

10.1017/cbo9780511619960 ◽

2008 ◽

Keyword(s):

Power Amplifier ◽

Behavioral Modeling ◽

Rf Power ◽

Rf Power Amplifier

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Proceedings of the 2nd Annual International Conferences on Web Technologies & Internet Applications (WebTech 2012), May 7, 2012, Bali, Indonesia: Special Tracks on Social Computing and Behavioral Modeling (SocialComp) and Enterprise Resource Planning & Supply Chain Management (ERP-SCM)

PsycEXTRA Dataset ◽

10.1037/e583192013-001 ◽

2012 ◽

Keyword(s):

Supply Chain ◽

Supply Chain Management ◽

Enterprise Resource Planning ◽

Social Computing ◽

Resource Planning ◽

Behavioral Modeling ◽

Internet Applications ◽

Chain Management ◽

Web Technologies

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Possibility of Reducing The On-resistance in 1 kV-class Lateral Superjunction Power Devices based on III-V Semiconductors

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.139.1015 ◽

2019 ◽

Vol 139 (9) ◽

pp. 1015-1019

Author(s):

Tomoyoshi Kushida ◽

Hiroyuki Sakaki

Keyword(s):

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International Standardization on Superconducting Power Devices

The Journal of the Institute of Electrical Engineers of Japan ◽

10.1541/ieejjournal.134.558 ◽

2014 ◽

Vol 134 (8) ◽

pp. 558-559

Author(s):

Koki TSUNODA ◽

Teruo MATSUSHITA

Keyword(s):

Power Devices ◽

International Standardization

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Neural-based Transient Behavioral Modeling of IC Buffers for High-speed Interconnect Design

PIERS Online ◽

10.2529/piers060907175229 ◽

2007 ◽

Vol 3 (7) ◽

pp. 1136-1138

Author(s):

Yi Cao ◽

Qijun Zhang ◽

Ihsan Erdin

Keyword(s):

Behavioral Modeling ◽

Interconnect Design

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Semiconductor devices � Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices

10.3403/30366380 ◽

2019 ◽

Keyword(s):

Silicon Carbide ◽

Semiconductor Devices ◽

Power Devices ◽

Non Destructive

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Semiconductor devices � Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices

10.3403/30351626 ◽

2019 ◽

Keyword(s):

Silicon Carbide ◽

Semiconductor Devices ◽

Power Devices ◽

Non Destructive

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Semiconductor devices � Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices

10.3403/30382425u ◽

2020 ◽

Keyword(s):

Silicon Carbide ◽

Semiconductor Devices ◽

Power Devices ◽

Non Destructive

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Defect engineering in SiC technology for high-voltage power devices

Applied Physics Express ◽

10.35848/1882-0786/abc787 ◽

2020 ◽

Vol 13 (12) ◽

pp. 120101

Author(s):

Tsunenobu Kimoto ◽

Heiji Watanabe

Keyword(s):

High Voltage ◽

Defect Engineering ◽

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Steady-state and transient electro-thermal simulation of power devices and MMICs based on 3D physical thermal models

China-Ireland International Conference on Information and Communications Technologies (CIICT 2007) ◽

10.1049/cp:20070804 ◽

2007 ◽

Author(s):

J. Ding ◽

D. Linton

Keyword(s):

Steady State ◽

Thermal Simulation ◽

Power Devices ◽

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