A generic numerical model on heterodyne terahertz detection in field effect transistor

2010 ◽  
Author(s):  
Zhifeng Yan ◽  
Jingxuan Zhu ◽  
Xinnan Lin ◽  
Frank He ◽  
Guozeng Wang ◽  
...  
Keyword(s):  
Numerical Model ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Terahertz Detection ◽  
Effect Transistor

scholarly journals Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell

2011 ◽  
Vol 99 (24) ◽  
pp. 243504 ◽  
Author(s):  
V. V. Popov ◽  
D. V. Fateev ◽  
T. Otsuji ◽  
Y. M. Meziani ◽  
D. Coquillat ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Unit Cell ◽  
Asymmetric Unit ◽  
Transistor Structure ◽  
Terahertz Detection ◽  
Effect Transistor ◽  
Asymmetric Unit Cell

scholarly journals Plasma waves Terahertz detection by field effect transistor in Quantinzing magnetic fields

2009 ◽  
Vol 193 ◽  
pp. 012083
Author(s):  
S Boubanga-Tombet ◽  
F Teppe ◽  
W Knap ◽  
K Karpierz ◽  
J Lusakowski ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Plasma Waves ◽  
Terahertz Detection ◽  
Effect Transistor

scholarly journals Ge-Core/a-Si-Shell Nanowire-Based Field-Effect Transistor for Sensitive Terahertz Detection

Photonics ◽  
2018 ◽  
Vol 5 (2) ◽  
pp. 13 ◽  
Author(s):  
Xiangying Deng ◽  
Marolop Simanullang ◽  
Yukio Kawano
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Terahertz Detection ◽  
Effect Transistor

Terahertz Detection Related to Plasma Excitations in Nanometer Gate Length Field Effect Transistor.

2006 ◽  
Vol 958 ◽  
Author(s):  
Wojciech Knap ◽  
A. El Fatimy ◽  
R. Tauk ◽  
S. Boubanga Tombet ◽  
F. Teppe
Keyword(s):  
Plasma Wave ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Resonant Cavity ◽  
Plasma Waves ◽  
Gate Length ◽  
Terahertz Detection ◽  
Thz Detection ◽  
Effect Transistor

ABSTRACTThe channel of nanometre field effect transistor can act as a resonant cavity for plasma waves. The frequency of these plasma waves is in the Terahertz range and can be tuned by the gate length and the gate bias. During the last few years Terahertz detection and emission related to plasma wave instabilities in nanometre size field effect transistors was demonstrated experimentally. In this work we review the recent results on sub-THz and THz detection by 50-300nm gate length III-V HEMTs and Si MOSFETs. We present experimental results on the resonant and nonresonant (overdamped) plasma wave detection and discuss possible applications of nanometre field effect transistors as new detectors of THz radiations.

scholarly journals Terahertz Detection by a Homodyne Field Effect Transistor Multiplicative Mixer

2012 ◽  
Vol 2 (3) ◽  
pp. 278-283 ◽  
Author(s):  
Sascha Preu ◽  
Sangwoo Kim ◽  
Ravi Verma ◽  
Peter G. Burke ◽  
Nguyen Q. Vinh ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Terahertz Detection ◽  
Effect Transistor

High-responsivity terahertz detection by on-chip InGaAs/GaAs field-effect-transistor array

2011 ◽  
Vol 98 (15) ◽  
pp. 153504 ◽  
Author(s):  
V. V. Popov ◽  
D. M. Ermolaev ◽  
K. V. Maremyanin ◽  
N. A. Maleev ◽  
V. E. Zemlyakov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Responsivity ◽  
Terahertz Detection ◽  
Effect Transistor ◽  
On Chip
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