A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor

A double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) as a terahertz (THz) detector at 315 GHz frequency is proposed and fabricated in this paper. The structure of the epitaxial layer material in the detector is optimized, and the performance of the GaN HEMT THz detector is improved. The maximum responsivity of 10 kV/W and minimum noise equivalent power (NEP) of 15.5 pW/Hz0.5 are obtained at the radiation frequency of 315 GHz. The results are comparable to and even more promising than the reported single-channel (SC) GaN HEMT detectors. The enhancement of THz response and the reduction of NEP of the DC GaN HEMT detector mainly results from the interaction of 2DEG in the upper and lower channels, which improves the self-mixing effect of the detector. The promising experimental results mean that the proposed DC GaN/AlGaN HEMT THz detector is capable of the practical applications of THz detection.

Improvement of an InfraRed Pyroelectric Detector Performances in THz Range Using the Terajet Effect

An infrared (IR) pyroelectric detector was investigated for terahertz (THz) detection using the principle of the terajet effect, which focuses the beam beyond the diffraction limit. The terahertz beam was coupled to the detector’s optical window through a two-wavelength-dimension dielectric cubic particle-lens based on the terajet effect. We experimentally demonstrate an enhancement of about 6 dB in the sensitivity under excitation of 0.2 THz without degradation of the noise equivalent power value. The results show that the proposed method could be applied to increase the sensitivity of various commercial IR sensors for THz applications that do not require modification of the internal structure, and it may apply also to acoustics and plasmonic detectors.

Towards Measuring Terahertz Photon Statistics by a Superconducting Bolometer

Statistical distributions of the analog readings of an antenna-coupled THz superconducting bolometer were measured and analyzed under a special type of irradiation by low-energy fluxes of THz photons with Poisson photon statistics and controllable mean photon numbers. The photons were generated via low-gain parametric down-conversion in pulse-pumped Mg:LiNbO3 crystal placed to a cooled cryostat together with the bolometer NbN film. Results of theoretical approximation of experimental histograms reveal the discrete nature of THz detection by superconducting bolometers and open a way for studying their quantum characteristics. It is shown that bolometer readings per pulse consist of discrete counts (“single charges”), with the mean number linearly dependent on the number of input photons. Contributions of single counts to a total analog reading are statistically distributed according to the normal law, with average values slightly depending on the number of counts in each reading. A general formula is proposed to describe the relationship between continuous statistical distribution of the bolometer readings and discrete quantum statistics of the incident photons.