Single photon counting for 1300-1600 nm using Peltier cooled and passively quenched InGaAs avalanche photodiodes

Author(s):  
J.G. Rarity ◽  
T.E. Wall ◽  
K.D. Ridley ◽  
P.R. Tapster
2008 ◽  
Author(s):  
Ping Yuan ◽  
Joseph Boisvert ◽  
Rengarajan Sudharsanan ◽  
Takahiro Isshiki ◽  
Paul McDonald ◽  
...  

2020 ◽  
Vol 32 (14) ◽  
pp. 847-850
Author(s):  
Xingye Zhou ◽  
Xin Tan ◽  
Yuanjie Lv ◽  
Yuangang Wang ◽  
Jia Li ◽  
...  

2019 ◽  
Vol 40 (12) ◽  
pp. 121802 ◽  
Author(s):  
Linlin Su ◽  
Dong Zhou ◽  
Hai Lu ◽  
Rong Zhang ◽  
Youdou Zheng

2000 ◽  
Vol 39 (36) ◽  
pp. 6746 ◽  
Author(s):  
John G. Rarity ◽  
Thomas E. Wall ◽  
Kevin D. Ridley ◽  
Philippa C. M. Owens ◽  
Paul R. Tapster

2006 ◽  
Vol 527-529 ◽  
pp. 1461-1464 ◽  
Author(s):  
Feng Yan ◽  
Xiao Bin Xin ◽  
Petre Alexandrov ◽  
Carl M Stahle ◽  
Bing Guan ◽  
...  

A variety of silicon carbide (SiC) detectors have been developed to study their sensitivity, including Schottky photodiodes, p-i-n photodiodes, avalanche photodiodes (APDs), and single photon-counting APDs. Due to the very wide bandgap and thus extremely low leakage current, SiC photo-detectors show excellent sensitivity. The specific detectivity, D*, of SiC photodiodes are many orders of magnitude higher than the D* of other solid state detectors, and for the first time, comparable to that of photomultiplier tubes (PMTs). SiC APDs have also been fabricated to pursue the ultimate sensitivity. By operating the SiC APDs at a linear mode gain over 106, single photoncounting avalanche photodiodes (SPADs) in UV have been demonstrated.


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