scholarly journals Terahertz Absorption by Magnetoplasma Sound Wave Excitation in Semiconductor Heterostructures

Author(s):  
C. Zhang ◽  
S.H. Pilehrood ◽  
R.A. Lewis
2013 ◽  
Vol 39 (1) ◽  
pp. 39-42
Author(s):  
I. I. Lyapilin

1998 ◽  
Vol 248 (1) ◽  
pp. 86-91 ◽  
Author(s):  
F. Do Prado ◽  
D.M. Karfidov ◽  
M.Virgínia Alves ◽  
R.S. Dallaqua

2008 ◽  
Author(s):  
Fabio Vincitorio ◽  
Alberto Ramil ◽  
Ana J. López ◽  
Emilio Saavedra ◽  
Armando Yáñez

Author(s):  
E.G. Bithell ◽  
W.M. Stobbs

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.


2012 ◽  
Author(s):  
Bruno Moreira ◽  
Mauricio Kischinhevsky ◽  
Marcelo Zamith ◽  
Esteban Clua ◽  
Diego Brandao

2001 ◽  
Vol 11 (PR2) ◽  
pp. Pr2-285-Pr2-288
Author(s):  
R. Tommasini ◽  
E. E. Fill

2018 ◽  
Vol 77 (6) ◽  
pp. 469-487 ◽  
Author(s):  
S. S. Sautbekov ◽  
K. Yu. Sirenko ◽  
Yurii Konstantinovich Sirenko ◽  
A. Ye. Poyedinchuk ◽  
N. P. Yashina ◽  
...  

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