A Dual-Band High-Efficiency Power Amplifier Based on Novel Impedance Matching and Harmonic Control Structure

Author(s):  
Ze-Bin Zhang ◽  
Liu-Yu Wei ◽  
Fu-Chang Chen
IEEE Access ◽  
2018 ◽  
Vol 6 ◽  
pp. 51864-51874 ◽  
Author(s):  
Zhenxing Yang ◽  
Yao Yao ◽  
Mingyu Li ◽  
Yi Jin ◽  
Tian Li ◽  
...  

Electronics ◽  
2021 ◽  
Vol 10 (20) ◽  
pp. 2450
Author(s):  
Syed Muhammad Ammar Ali ◽  
S. M. Rezaul Hasan

This paper reports a “single-transistor” Class-F−1 power amplifier (PA) in 65 nm CMOS, which operates at the microwave center frequency of 6 GHz. The PA is loaded with a Class-F−1 harmonic control network, employing a new “parasitic-aware” topology deduced using a novel iterative algorithm. A dual-purpose output matching network is designed, which not only serves the purpose of output impedance matching, but also reinforces the harmonic control of the Class-F−1 harmonic network. This proposed PA yields a peak power-added efficiency (PAE) of 47.8%, which is one of the highest when compared to previously reported integrated microwave/millimeter-wave PAs in CMOS and SiGe technologies. The amplifier shows a saturated output power of 14.4 dBm along with an overall gain of 13.8 dB.


Author(s):  
Heng Xie ◽  
Yu Jian Cheng ◽  
Yan Ran Ding ◽  
Lei Wang ◽  
Yong Fan

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