Engineering implication of the correlation between the leakage current in high-k dielectric materials and the electronic defect states detected by zero-bias thermally stimulated current spectroscopy

Author(s):  
W. S. Lau
2019 ◽  
Vol 1 (5) ◽  
pp. 577-589 ◽  
Author(s):  
Wai Shing Lau ◽  
Taejoon Han ◽  
G. L. Zhang ◽  
P. W. Qian ◽  
L. L. Leong ◽  
...  

2006 ◽  
Vol 917 ◽  
Author(s):  
Wai Shing Lau ◽  
Kum Fai Wong ◽  
Taejoon Han ◽  
N. P. Sandler

AbstractPreviously, we have reported our application of the zero-bias thermally stimulated current (ZBTSC) spectroscopy technique to study defect states in high-dielectric constant insulator films like tantalum oxide (Ta2O5) with much less parasitic current which can be a serious limitation for the conventional thermally stimulated current (TSC) method. However, a parasitic current can still be observed for ZBTSC because of a small parasitic temperature gradient across the sample. The thermal design of the ZBTSC system can be improved, resulting in zero-temperature-gradient ZBTSC (ZTGZBTSC) which can be used to detect deeper traps than ZBTSC.


Sign in / Sign up

Export Citation Format

Share Document