A Comparison of Defect States in Tantalum Pentoxide (Ta2O5) Films after Rapid Thermal Annealing inO2orN2Oby Zero-Bias Thermally Stimulated Current Spectroscopy

AbstractPreviously, we have reported our application of the zero-bias thermally stimulated current (ZBTSC) spectroscopy technique to study defect states in high-dielectric constant insulator films like tantalum oxide (Ta2O5) with much less parasitic current which can be a serious limitation for the conventional thermally stimulated current (TSC) method. However, a parasitic current can still be observed for ZBTSC because of a small parasitic temperature gradient across the sample. The thermal design of the ZBTSC system can be improved, resulting in zero-temperature-gradient ZBTSC (ZTGZBTSC) which can be used to detect deeper traps than ZBTSC.

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Defect States Induced by Rapid Thermal Annealing in Virgin or Implanted Czochralski-Grown Silicon

MRS Proceedings ◽

10.1557/proc-74-705 ◽

1986 ◽

Vol 74 ◽

Cited By ~ 2

Author(s):

M. Remram ◽

D. Barbier ◽

J.-F. Joly ◽

A. Laugier

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Schottky Contacts ◽

High Dose ◽

Hole Trap ◽

Defect States ◽

Incoherent Light ◽

Boron Doped ◽

Doped Silicon ◽

State Generation

AbstractDefect state generation in either virgin or implanted CZ silicon has been investigated by means of capacitance transient spectroscopy (DLTS) after rapid thermal annealing (RTA), using an incoherent light furnace and variable cycle parameters. No electron traps were dectected with gold Schottky contacts made on virgin phosporous-doped silicon annealed for 5 sec at any temperature. On the otherhand 3 hole trap levels H1(0.45 eV), H2(0.29 eV) and H3(0.31 eV) have been observed in boron-doped silicon (Al Schottky contacts) after a 5 sec temperature plateau between 850 and 1050°C. Peak concentrations ranging from 1013 to 1014 cm−3 were measured after annealing at 1000°C for the three hole traps. By increasing the plateau duration up to 20 sec hole traps were no longer detected in boron-doped silicon. Furthermore in As+ or PF5+-implanted and rapidly annealed N+/P junctions the H3(0.31 eV) level was replaced by another hole trap H4(0.4 eV), which appeared within specific conditions (RTA parameters, implant dose and species). Moreover an electron trap E(0.55 eV) was only detected in the high dose As+-implanted junctions after annealing for 10 sec at 1100°C. The probable metallic origin of the observed defect states and the RTA parameter dependence of the hole trap concentrations suggest gettering and trapping in interstitial sites as possible mechanisms involved in RTA.

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Detection of oxygen vacancy defect states in oxide nanobelts by using thermally stimulated current spectroscopy

Semiconductor Science and Technology ◽

10.1088/0268-1242/27/6/065021 ◽

2012 ◽

Vol 27 (6) ◽

pp. 065021 ◽

Cited By ~ 4

Author(s):

Olivia M Berengue ◽

Mariana K Kanashiro ◽

Adenilson J Chiquito ◽

Cleocir J Dalmaschio ◽

Edson R Leite

Keyword(s):

Oxygen Vacancy ◽

Vacancy Defect ◽

Defect States ◽

Thermally Stimulated Current ◽

Thermally Stimulated Current Spectroscopy

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Defect States in GaAs after Rapid Thermal Annealing

MRS Proceedings ◽

10.1557/proc-46-333 ◽

1985 ◽

Vol 46 ◽

Cited By ~ 3

Author(s):

R. A. Street ◽

N. M. Johnson ◽

R. D. Burnham

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Deep Levels ◽

Luminescence Spectra ◽

Defect States ◽

Type Conversion ◽

Annealing Temperatures ◽

Luminescence Peak ◽

Capacitance Voltage ◽

Anneal Temperature

AbstractElectronic deep levels in GaAs have been investigated by correlated luminescence and DLTS measurements on material in which the defects were systematically perturbed by rapid thermal annealing. The samples were grown by MOCVD and encapsulated with silicon nitride. Annealing was performed at temperatures from 800°C to 950°C for 5 seconds. The luminescence spectra were measured from 0.7 to 1.6 eV at temperatures from 4-80 K and have features at 0.97, 1.17, 1.35, 1.40 and 1.5 eV. The band-to-acceptor luminescence shows the formation of Si acceptors, starting at an anneal temperature of about 850°C. The luminescence peak at 1,35 eV, attributed to As vacancy - acceptor complexes, is observed to increase in intensity with higher annealing temperatures. In contrast, the Ga vacancy-donor complex peak at 1,17 eV decreases in intensity. DLTS data show an increase in the density of deep levels and new levels not present in the unannealed material. Capacitance-voltage data find a reduction in carrier concentration, although type conversion is not observed even after annealing to 950°C.

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