Improvement of IGBT latching performance by indium doping

Author(s):  
Z. Shen ◽  
V. Parthasarathy ◽  
T.P. Chow
Keyword(s):  
1999 ◽  
Vol 353 (1-2) ◽  
pp. 189-193 ◽  
Author(s):  
N. Saito ◽  
Y. Inui ◽  
T. Yamaguchi ◽  
I. Nakaaki

2010 ◽  
Vol 490 (1-2) ◽  
pp. 62-67 ◽  
Author(s):  
C.E. Benouis ◽  
M. Benhaliliba ◽  
A. Sanchez Juarez ◽  
M.S. Aida ◽  
F. Chami ◽  
...  

2012 ◽  
Vol 32 (1) ◽  
pp. 0119001
Author(s):  
陈宝东 Chen Baodong ◽  
温静 Wen Jing
Keyword(s):  

2020 ◽  
Vol 8 ◽  
Author(s):  
Shodruz T. Umedov ◽  
Anastasia V. Grigorieva ◽  
Leonid S. Lepnev ◽  
Alexander V. Knotko ◽  
Koji Nakabayashi ◽  
...  
Keyword(s):  

Nanoscale ◽  
2019 ◽  
Vol 11 (7) ◽  
pp. 3154-3163 ◽  
Author(s):  
Enrico Della Gaspera ◽  
Joseph Griggs ◽  
Taimur Ahmed ◽  
Sumeet Walia ◽  
Edwin L. H. Mayes ◽  
...  

Indium doping in ZnS nanocrystals heavily affects the band gap beyond quantum confinement effect with unprecedented tunability in the UVA/UVB range.


Sign in / Sign up

Export Citation Format

Share Document