Switching characteristics of high-breakdown voltage AlGaN/GaN HEMTs

2005 ◽  
Author(s):  
Y. Dora ◽  
C. Suh ◽  
A. Chakraborty ◽  
S. Heikman ◽  
S. Chandrasekarana ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Breakdown Voltage ◽  
Gan Hemts ◽  
Switching Characteristics

scholarly journals High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates

2004 ◽  
Vol 25 (4) ◽  
pp. 161-163 ◽  
Author(s):  
H. Xing ◽  
Y. Dora ◽  
A. Chini ◽  
S. Heikman ◽  
S. Keller ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Breakdown Voltage ◽  
Gan Hemts ◽  
Multiple Field

HfO2 -insulated gate N-polar GaN HEMTs with high breakdown voltage

2011 ◽  
Vol 208 (7) ◽  
pp. 1630-1633 ◽  
Author(s):  
D. J. Meyer ◽  
D. S. Katzer ◽  
D. A. Deen ◽  
D. F. Storm ◽  
S. C. Binari ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Breakdown Voltage ◽  
Gan Hemts

Multi channel AlGaN/GaN HEMTs for high breakdown voltage and low leakage current

2004 ◽  
Author(s):  
Seung-Chul Lee ◽  
Jin-Cherl Her ◽  
Min-Woo Ha ◽  
Kwang-Seok Seo ◽  
Min-Koo Han
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
High Breakdown Voltage ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Gan Hemts

scholarly journals High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

2014 ◽  
Vol 9 (1) ◽  
Author(s):  
Ya-Ju Lee ◽  
Yung-Chi Yao ◽  
Chun-Ying Huang ◽  
Tai-Yuan Lin ◽  
Li-Lien Cheng ◽  
...  
Keyword(s):  
Quantum Well ◽  
Breakdown Voltage ◽  
High Breakdown Voltage ◽  
Gan Hemts
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