Design and simulation of high breakdown voltage AlGaN/GaN HEMTs with a charged passivation layer for microwave power applications

2017 ◽  
Vol 16 (3) ◽  
pp. 741-747 ◽  
Author(s):  
Jiangfeng Du ◽  
Zhiguang Jiang ◽  
Zhiyuan Bai ◽  
Peilin Pan ◽  
Qi Yu
Keyword(s):  
Breakdown Voltage ◽  
Microwave Power ◽  
Passivation Layer ◽  
High Breakdown Voltage ◽  
Gan Hemts

High breakdown voltage AlGaN/GaN HEMTs with a dipole layer for microwave power applications

2019 ◽  
Vol 14 (5) ◽  
pp. 488-492 ◽  
Author(s):  
Jiangfeng Du ◽  
Xiaoyun Li ◽  
Zhiyuan Bai ◽  
Yong Liu ◽  
Qi Yu
Keyword(s):  
Breakdown Voltage ◽  
Microwave Power ◽  
High Breakdown Voltage ◽  
Dipole Layer ◽  
Gan Hemts

scholarly journals High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates

2004 ◽  
Vol 25 (4) ◽  
pp. 161-163 ◽  
Author(s):  
H. Xing ◽  
Y. Dora ◽  
A. Chini ◽  
S. Heikman ◽  
S. Keller ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
High Breakdown Voltage ◽  
Gan Hemts ◽  
Multiple Field
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