Investigation of Performance Degradation in Power MOSFET under OFF-State Avalanche Breakdown Test

Author(s):  
Chi Xu ◽  
Fei Yang ◽  
Bilal Akin ◽  
Yogesh Ramadass
2012 ◽  
Vol 28 (1) ◽  
pp. 015007 ◽  
Author(s):  
C Pace ◽  
S Pierro ◽  
V Cilia ◽  
G Consentino

2015 ◽  
Vol 55 (9-10) ◽  
pp. 1628-1633 ◽  
Author(s):  
Koichi Endo ◽  
Kenji Norimatsu ◽  
Tomonori Nakamura ◽  
Takashi Setoya ◽  
Koji Nakamae

2012 ◽  
Vol 160 ◽  
pp. 125-129
Author(s):  
Xiang Fen Wang ◽  
Gui Cui Fu ◽  
Cheng Gao ◽  
Jin Yong Yao

A performance degradation assessment method is proposed based on probability statistic of common turn-on state of power MOSFET circuit in this paper. Threshold shift transient characteristics of MOSFET are studied and the performance degradation behavior of a bridge power MOSFET circuit is simulated. Threshold voltage degradation of a power MOSFET circuit caused by half bridge arm is observed and the probability of a period transient common turn-on state is calculated to evaluate the degree. The result can be used to evaluate the performance degradation trend and can also provide data support for predicting the degradation degree before circuit failed.


Author(s):  
Kyle D. Wesson ◽  
Swen D. Ericson ◽  
Terence L. Johnson ◽  
Karl W. Shallberg ◽  
Per K. Enge ◽  
...  

Author(s):  
Edgar Ofuchi ◽  
Ana Leticia Lima Santos ◽  
Thiago Sirino ◽  
Henrique Stel ◽  
Rigoberto Morales

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