Reduction of extrinsic base resistance in GaAs/AlGaAs heterojunction bipolar transistors and correlation with high-frequency performance

IEEE Electron Device Letters ◽

10.1109/edl.1986.26400 ◽

1986 ◽

Vol 7 (6) ◽

pp. 359-362 ◽

Author(s):

R. Fischer ◽

H. Morkoc

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Frequency ◽

Bipolar Transistors ◽

Base Resistance ◽

Extrinsic Base ◽

High Frequency Performance

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Improved high frequency performance by composite emitter AlGaAs/GaInP heterojunction bipolar transistors fabricated using chemical beam epitaxy

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors ◽

10.1109/iscs.1998.711687 ◽

1997 ◽

Author(s):

J.-W. Park ◽

D. Pavlidis ◽

S. Mohammadi ◽

C. Dua ◽

J.C. Garcia

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Frequency ◽

Bipolar Transistors ◽

Chemical Beam Epitaxy ◽

High Frequency Performance

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Monte Carlo study of the influence of collector region velocity overshoot on the high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.7355 ◽

1988 ◽

Vol 35 (10) ◽

pp. 1573-1579 ◽

Author(s):

P.I. Rockettt

Keyword(s):

Monte Carlo ◽

Heterojunction Bipolar Transistors ◽

High Frequency ◽

Monte Carlo Study ◽

Bipolar Transistors ◽

Velocity Overshoot ◽

Collector Region ◽

High Frequency Performance

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IIIA-6 high-frequency performance of AlGaAs/InGaAs/GaAs strained layer heterojunction bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1986.22778 ◽

1986 ◽

Vol 33 (11) ◽

pp. 1845-1846

Author(s):

G.J. Sullivan ◽

P.M. Asbeck ◽

M.F. Chang ◽

D.L. Miller ◽

K.C. Wang

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Frequency ◽

Bipolar Transistors ◽

Strained Layer ◽

High Frequency Performance

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Theory of Ultra High Frequency Performance Heterojunction Bipolar Transistors

Ultrafast Electronics and Optoelectronics ◽

10.1364/ueo.1993.b4 ◽

1993 ◽

Author(s):

A. A. Grinberg ◽

S. Luryi

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Frequency ◽

Bipolar Transistors ◽

Ultra High Frequency ◽

High Frequency Performance

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High frequency performance of SiC heterojunction bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.293335 ◽

1994 ◽

Vol 41 (7) ◽

pp. 1092-1097 ◽

Author(s):

Guang-Bo Gao ◽

J. Sterner ◽

H. Morkoc

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Frequency ◽

Bipolar Transistors ◽

High Frequency Performance

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DC and high-frequency performance of AlGaN/GaN Heterojunction Bipolar Transistors

Solid-State Electronics ◽

10.1016/s0038-1101(99)00230-0 ◽

2000 ◽

Vol 44 (2) ◽

pp. 245-252 ◽

Author(s):

Egor Alekseev ◽

Dimitris Pavlidis

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Frequency ◽

Bipolar Transistors ◽

High Frequency Performance

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High-frequency performance limitations of millimeter-wave heterojunction bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.2502 ◽

1988 ◽

Vol 35 (5) ◽

pp. 604-614 ◽

Author(s):

M.B. Das

Keyword(s):

Millimeter Wave ◽

Heterojunction Bipolar Transistors ◽

High Frequency ◽

Bipolar Transistors ◽

Performance Limitations ◽

High Frequency Performance

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High-frequency performance of MOVPE npn AlGaAs/GaAs heterojunction bipolar transistors

Electronics Letters ◽

10.1049/el:19890755 ◽

1989 ◽

Vol 25 (17) ◽

pp. 1124 ◽

Author(s):

P.M. Enquist ◽

J.A. Hutch By ◽

M.F. Chang ◽

P.M. Asbeck ◽

N.H. Sheng ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Frequency ◽

Bipolar Transistors ◽

High Frequency Performance

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Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/29/9/095020 ◽

2014 ◽

Vol 29 (9) ◽

pp. 095020 ◽

Author(s):

E Ramirez-Garcia ◽

N Zerounian ◽

F Aniel ◽

L A Valdez-Monroy ◽

L M Rodriguez-Mendez ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Doping Level ◽

Bipolar Transistors ◽

Base Resistance ◽

Germanium Content ◽

Dynamic Performances ◽

Extrinsic Base ◽

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The effect of base grading on the gain and high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.40897 ◽

1989 ◽

Vol 36 (10) ◽

pp. 2173-2182 ◽

Author(s):

S.C.M. Ho ◽

D.L. Pulfrey

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Frequency ◽

Bipolar Transistors ◽

High Frequency Performance

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