Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors

Ultra low power (<2 mW) noise performance of InGaP/GaAs HBT

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors ◽

10.1109/iscs.1998.711728 ◽

1997 ◽

Author(s):

D.W. Barlage ◽

M.S. Heins ◽

J.H. Mu ◽

M.T. Fresina ◽

D.A. Ahmari ◽

...

Keyword(s):

Low Power ◽

Noise Performance ◽

Ultra Low Power

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An Au/Pt/Ti/WN/sub x/ ohmic contact to n-InGaAs and its application to AlGaAs/GaAs HBTs

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors ◽

10.1109/iscs.1998.711704 ◽

1997 ◽

Author(s):

Sung Ho Park ◽

Il-Ho Kim ◽

Tae-Woo Lee ◽

Moon-Pyung Park

Keyword(s):

Ohmic Contact

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Comprehensive simulation of quantum well lasers

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors ◽

10.1109/iscs.1998.711755 ◽

1997 ◽

Cited By ~ 1

Author(s):

M.S. Hybertsen ◽

M.A. Alam ◽

R.K. Smith ◽

G.A. Baraff ◽

M.R. Pinto

Keyword(s):

Quantum Well ◽

Quantum Well Lasers

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Improved high frequency performance by composite emitter AlGaAs/GaInP heterojunction bipolar transistors fabricated using chemical beam epitaxy

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors ◽

10.1109/iscs.1998.711687 ◽

1997 ◽

Cited By ~ 1

Author(s):

J.-W. Park ◽

D. Pavlidis ◽

S. Mohammadi ◽

C. Dua ◽

J.C. Garcia

Keyword(s):

Heterojunction Bipolar Transistors ◽

High Frequency ◽

Bipolar Transistors ◽

Chemical Beam Epitaxy ◽

High Frequency Performance

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Ultra-linear pseudomorphic HEMTs for wireless communications: A simulation study

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors ◽

10.1109/iscs.1998.711718 ◽

1997 ◽

Author(s):

Z. Borsosfoldi ◽

D.R. Webster ◽

I.G. Thayne ◽

A. Asenov ◽

D.G. Haigh ◽

...

Keyword(s):

Wireless Communications ◽

Simulation Study

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Strain tensor, electronic spectra and carrier dynamics in In(Ga)As/GaAs self-assembled quantum dots

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors ◽

10.1109/iscs.1998.711731 ◽

1997 ◽

Author(s):

K. Kamath ◽

H. Jiang ◽

D. Klotzkin ◽

J. Phillips ◽

T. Sosnowski ◽

...

Keyword(s):

Quantum Dots ◽

Electronic Spectra ◽

Strain Tensor ◽

Carrier Dynamics ◽

Self Assembled

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Localized intermixing of AlAs and GaAs layers for lithographic control of the lateral oxidation of AlAs

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors ◽

10.1109/iscs.1998.711647 ◽

1997 ◽

Author(s):

A.R. Massengale ◽

C.Y. Tai ◽

M.D. Deal ◽

J.D. Plummer ◽

J.S. Harris

Keyword(s):

Lateral Oxidation

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Enhanced optical crystal quality of strain-compensated InGaAs/InGaAsP quantum-well structures on GaAs substrates by the introduction of intermediate-strain layers

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors ◽

10.1109/iscs.1998.711573 ◽

1997 ◽

Author(s):

K. Hiramoto ◽

M. Sagawa ◽

S. Fujisaki ◽

T. Toyonaka

Keyword(s):

Quantum Well ◽

Crystal Quality ◽

Quantum Well Structures ◽

Gaas Substrates ◽

Optical Crystal

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Photoinduced instability in microwave excited GaAs MESFETs

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors ◽

10.1109/iscs.1998.711724 ◽

1997 ◽

Author(s):

E.Y. Lan ◽

J.H. Huang ◽

J. Blaugh ◽

E. Schirmann

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In-situ monitoring of the selective etching of antimonides in GaSb/AlSb/InAs heterostructures using Raman spectroscopy

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors ◽

10.1109/iscs.1998.711649 ◽

1997 ◽

Author(s):

C. Gatzke ◽

S.J. Webb ◽

K. Fobelets ◽

R.A. Stradling

Keyword(s):

Raman Spectroscopy ◽

Selective Etching ◽

In Situ Monitoring

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Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors
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TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Ultra low power (<2 mW) noise performance of InGaP/GaAs HBT

An Au/Pt/Ti/WN/sub x/ ohmic contact to n-InGaAs and its application to AlGaAs/GaAs HBTs

Comprehensive simulation of quantum well lasers

Improved high frequency performance by composite emitter AlGaAs/GaInP heterojunction bipolar transistors fabricated using chemical beam epitaxy

Ultra-linear pseudomorphic HEMTs for wireless communications: A simulation study

Strain tensor, electronic spectra and carrier dynamics in In(Ga)As/GaAs self-assembled quantum dots

Localized intermixing of AlAs and GaAs layers for lithographic control of the lateral oxidation of AlAs

Enhanced optical crystal quality of strain-compensated InGaAs/InGaAsP quantum-well structures on GaAs substrates by the introduction of intermediate-strain layers

Photoinduced instability in microwave excited GaAs MESFETs

In-situ monitoring of the selective etching of antimonides in GaSb/AlSb/InAs heterostructures using Raman spectroscopy

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Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound SemiconductorsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Ultra low power (<2 mW) noise performance of InGaP/GaAs HBT

An Au/Pt/Ti/WN/sub x/ ohmic contact to n-InGaAs and its application to AlGaAs/GaAs HBTs

Comprehensive simulation of quantum well lasers

Improved high frequency performance by composite emitter AlGaAs/GaInP heterojunction bipolar transistors fabricated using chemical beam epitaxy

Ultra-linear pseudomorphic HEMTs for wireless communications: A simulation study

Strain tensor, electronic spectra and carrier dynamics in In(Ga)As/GaAs self-assembled quantum dots

Localized intermixing of AlAs and GaAs layers for lithographic control of the lateral oxidation of AlAs

Enhanced optical crystal quality of strain-compensated InGaAs/InGaAsP quantum-well structures on GaAs substrates by the introduction of intermediate-strain layers

Photoinduced instability in microwave excited GaAs MESFETs

In-situ monitoring of the selective etching of antimonides in GaSb/AlSb/InAs heterostructures using Raman spectroscopy

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors
Latest Publications