A High Gain 450/900 MHz Dual Band Low Noise Amplifier for IoT and LTE Low-Band Receivers

2019 ◽  
Author(s):  
Andrey A. Antonov ◽  
Igor K. Surin ◽  
Maksim S. Karpovich ◽  
Dmitry L. Shlemin
Keyword(s):  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Dual Band ◽  
Noise Amplifier

scholarly journals Single Stage 180nm CMOS Low Noise Amplifier Topologies and Optimization Algorithms for S Band Frequency

2019 ◽  
Vol 8 (3) ◽  
pp. 152-157 ◽  
Keyword(s):  
Noise Figure ◽  
Optimization Algorithms ◽  
Satellite System ◽  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Dual Band ◽  
Active Device ◽  
Band Frequency ◽  
Noise Amplifier

Low Noise Amplifier (LNA) plays an important role in radio receivers. It mainly determines the system noise and intermodulation behavior of overall receiver. LNA design is more challenging as it requires high gain, low noise figure, good input and output matching and unconditional stability. Further, designing a Low noise Amplifier requires active device selection, amplifier topology, optimization algorithms for superlative results. Hence this paper presents performance analysis of CMOS LNA based on different topologies and optimization algorithms for 180nm RF CMOS design in S band frequency. Here the best results, various limitations in each topology are reviewed and required specifications are determined in each designing. Further this best topology is used for designing LNA circuit which could be used in Indian Regional Navigation Satellite System (IRNSS) applications in dual band frequency.

scholarly journals A concurrent dual-band CMOS low noise amplifier at 2.4/5.2 GHz for WLAN applications

2019 ◽  
Vol 14 (2) ◽  
pp. 555
Author(s):  
S.A.Z. Murad ◽  
A. F. Hasan ◽  
A. Azizan ◽  
A. Harun ◽  
J. Karim
Keyword(s):  
Noise Figure ◽  
Supply Voltage ◽  
Notch Filter ◽  
Cmos Technology ◽  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Dual Band ◽  
Common Source ◽  
Noise Amplifier

<span>This paper presents a concurrent dual-band CMOS low noise amplifier (LNA) at operating frequency of 2.4 GHz and 5.2 GHz for WLAN applications. The proposed LNA employed cascode common source to obtain high gain using 0.13-µm CMOS technology. The concurrent dual-band frequencies are matched using LC network band-pass and band-stop notch filter at the input and output stages. The filters help to shape the frequency response of the proposed LNA. The simulation results indicate that the LNA achieves a forward gain of 21.8 dB and 14.22 dB, input return loss of -18 dB and -14 dB at 2.4 GHz and 5.2 GHz, respectively. The noise figure of 4.1 dB and 3.5 dB with the input third-order intercept points 7 dBm and 10 dBm are obtained at 2.4 GHz and 5.2 GHz, respectively. The LNA dissipates 2.4 mW power at 1.2 V supply voltage with a chip size of 1.69 mm2.</span>

A dual-band low noise amplifier

2014 ◽  
Author(s):  
Z. Zhang ◽  
Z.H. Li ◽  
W.R. Zhang ◽  
F.Y. Zhao ◽  
C.L. Chen ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Dual Band ◽  
Noise Amplifier

A 0.1-10GHz Ultra-Wideband High-Gain Low-Noise Amplifier for UWB receiver

2021 ◽  
Author(s):  
Zerun Jin ◽  
Zhi-Jian Chen ◽  
Riyan Wang ◽  
Bin Li ◽  
Xiao-Ling Lin
Keyword(s):  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Noise Amplifier ◽  
Uwb Receiver

scholarly journals Design of 94-GHz High-Gain Differential Low-Noise Amplifier Using 65-nm CMOS

2018 ◽  
Vol 29 (5) ◽  
pp. 393-396
Author(s):  
Hyun-woo Seo ◽  
Jae-hyun Park ◽  
Jun-seong Kim ◽  
Byung-sung Kim
Keyword(s):  
High Gain ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Noise Amplifier
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