Improved modeling for transit time and excess phase delay of advanced bipolar transistors at high current densities

Proceedings of the 44th IEEE 2001 Midwest Symposium on Circuits and Systems. MWSCAS 2001 (Cat. No.01CH37257) ◽

10.1109/mwscas.2001.986319 ◽

2002 ◽

Author(s):

Seonghearn Lee

Keyword(s):

Transit Time ◽

Bipolar Transistors ◽

Phase Delay ◽

High Current ◽

Current Densities ◽

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Base-collector heterojunction barrier effects at high current densities of Si/SiGe/Si heterojunction bipolar transistors

Proceedings IEEE Southeastcon '98 'Engineering for a New Era' ◽

10.1109/secon.1998.673317 ◽

2002 ◽

Author(s):

Jiling Song ◽

J.S. Yuan

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

High Current ◽

Barrier Effects ◽

Current Densities

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Base-collector junction capacitance of bipolar transistors operating at high current densities

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1987.23236 ◽

1987 ◽

Vol 34 (11) ◽

pp. 2304-2308 ◽

Author(s):

J.J. Liou

Keyword(s):

Bipolar Transistors ◽

High Current ◽

Junction Capacitance ◽

Collector Junction ◽

Current Densities

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A compact physical large-signal model for high-speed bipolar transistors at high current densities—Part I: One-dimensional model

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1987.23146 ◽

1987 ◽

Vol 34 (8) ◽

pp. 1741-1751 ◽

Author(s):

H. Stubing ◽

H.-M. Rein

Keyword(s):

Bipolar Transistors ◽

High Current ◽

Dimensional Model ◽

Large Signal ◽

Signal Model ◽

One Dimensional ◽

Current Densities

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The influence of high current densities on the avalanche breakdown characteristics of bipolar transistors†

International Journal of Electronics ◽

10.1080/00207217008900188 ◽

1970 ◽

Vol 29 (1) ◽

pp. 73-81 ◽

Author(s):

V. A. BROWNE ◽

P. MARS

Keyword(s):

Bipolar Transistors ◽

Avalanche Breakdown ◽

High Current ◽

Current Densities

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Verification of the integral charge-control relation for high-speed bipolar transistors at high current densities

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1985.22076 ◽

1985 ◽

Vol 32 (6) ◽

pp. 1070-1076 ◽

Author(s):

H.-M. Rein ◽

H. Stubing ◽

M. Schroter

Keyword(s):

Bipolar Transistors ◽

High Current ◽

Charge Control ◽

Current Densities ◽

Control Relation

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Comments on "A compact physical large-signal model for high-speed bipolar transistors at high current densities-part I: one-dimensional model" (by H.-M. Rein et al., with reply)

IEEE Transactions on Electron Devices ◽

10.1109/16.7417 ◽

1988 ◽

Vol 35 (11) ◽

pp. 1995-1997

Author(s):

J.J. Liou ◽

H.-M. Rein ◽

M. Schroter ◽

H. Stubing

Keyword(s):

Bipolar Transistors ◽

High Current ◽

Dimensional Model ◽

Large Signal ◽

Signal Model ◽

One Dimensional ◽

Current Densities

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Base transit time of submicron bipolar transistors including nonuniform base doping profile and high current effects

10.1109/edms.1994.863875 ◽

2005 ◽

Author(s):

J.J. Liou ◽

C.S. Ho

Keyword(s):

Transit Time ◽

Bipolar Transistors ◽

Doping Profile ◽

High Current ◽

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Two-dimensional modeling of high-speed bipolar transistors at high current densities using the integral charge-control relation

Physica B+C ◽

10.1016/0378-4363(85)90596-0 ◽

1985 ◽

Vol 129 (1-3) ◽

pp. 332-336 ◽

Author(s):

M. Schröter ◽

H.-M. Rein

Keyword(s):

Bipolar Transistors ◽

Two Dimensional ◽

High Current ◽

Charge Control ◽

Dimensional Modeling ◽

Current Densities ◽

Control Relation

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A compact physical large-signal model for high-speed bipolar transistors at high current densities—Part II: Two-dimensional model and experimental results

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1987.23147 ◽

1987 ◽

Vol 34 (8) ◽

pp. 1752-1761 ◽

Author(s):

H.-M. Rein ◽

M. Schroter

Keyword(s):

Bipolar Transistors ◽

Experimental Results ◽

Two Dimensional ◽

High Current ◽

Dimensional Model ◽

Large Signal ◽

Signal Model ◽

Two Dimensional Model ◽

Current Densities

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Transit time of fast bipolar transistors at high collector-current densities

Solid-State Electronics ◽

10.1016/0038-1101(92)90126-w ◽

1992 ◽

Vol 35 (4) ◽

pp. 599-610 ◽

Author(s):

J. Weng

Keyword(s):

Transit Time ◽

Bipolar Transistors ◽

Collector Current ◽

Current Densities

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