Partial Discharge Detection Strategies under Fast Rise Time Voltages Generated by Wide-bandgap Semiconductor Devices

2019 ◽  
Author(s):  
Zhuo Wei ◽  
Haoyang You ◽  
Risha Na ◽  
Jin Wang
Keyword(s):  
Rise Time ◽  
Semiconductor Devices ◽  
Partial Discharge ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor ◽  
Fast Rise Time ◽  
Detection Strategies ◽  
Fast Rise ◽  
Discharge Detection

A Review of Switching Oscillations of Wide Bandgap Semiconductor Devices

2020 ◽  
Vol 35 (12) ◽  
pp. 13182-13199 ◽  
Author(s):  
Jian Chen ◽  
Xiong Du ◽  
Quanming Luo ◽  
Xinyue Zhang ◽  
Pengju Sun ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor

scholarly journals X-pinch X-ray emission on a portable low-current, fast rise-time generator

2018 ◽  
Vol 124 (8) ◽  
pp. 083303 ◽  
Author(s):  
T. A. Shelkovenko ◽  
S. A. Pikuz ◽  
I. N. Tilikin ◽  
S. N. Bland ◽  
D. Lall ◽  
...  
Keyword(s):  
Rise Time ◽  
X Ray ◽  
Fast Rise Time ◽  
Fast Rise

Measurement of expanding plasma sheath from a target biased by a negative pulse with a fast rise time

2003 ◽  
Vol 93 (3) ◽  
pp. 1384-1388 ◽  
Author(s):  
Gon-Ho Kim ◽  
Young-Woo Kim ◽  
Seunghee Han ◽  
Han-Sup Uhm ◽  
Jeonghee Cho ◽  
...  
Keyword(s):  
Rise Time ◽  
Plasma Sheath ◽  
Negative Pulse ◽  
Fast Rise Time ◽  
Fast Rise

Experimental demonstration of high‐power fast‐rise‐time switching in silicon junction semiconductors

1976 ◽  
Vol 29 (4) ◽  
pp. 261-263 ◽  
Author(s):  
O. S. F. Zucker ◽  
J. R. Long ◽  
V. L. Smith ◽  
D. J. Page ◽  
P. L. Hower
Keyword(s):  
High Power ◽  
Rise Time ◽  
Experimental Demonstration ◽  
Time Switching ◽  
Fast Rise Time ◽  
Fast Rise
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