Study on residual stress in viscoelastic thin film using curvature measurement method

Author(s):  
Y.T. Im ◽  
J.H. Kim ◽  
S.T. Choi
2004 ◽  
Vol 18 (1) ◽  
Author(s):  
Young Tae Im ◽  
Seung Tae Choi ◽  
Tae Sang Park ◽  
Jae Hyun Kim

2005 ◽  
Vol 875 ◽  
Author(s):  
F. Cacho ◽  
D. Aime ◽  
F. Wacquant ◽  
B. Froment ◽  
C. Rivero ◽  
...  

AbstractReactive diffusion of the Ni/Si system has been studied by annealing nickel thin film on (100) silicon crystal. The measurement of the NiSi sheet resistance as a function of the annealing temperature and the type of annealing (Rapid Thermal Annealing and spike one) has been investigated. A kinetic model based on multiphase diffusion has been developed that fits experimental sheet resistance data. Residual stress in the thin film, measured by a curvature measurement technique, is correlated with the nature of the phases in the film. Finally the viscoplastic mechanical behavior of the Ni2Si and NiSi phases is analyzed in the case of low and fast thermal ramps.


Measurement ◽  
2021 ◽  
Vol 175 ◽  
pp. 108984
Author(s):  
Jianhua Tang ◽  
Lezhang Liu ◽  
Li Jiang ◽  
Hui Huang ◽  
Qiongyao Wang

2000 ◽  
Vol 657 ◽  
Author(s):  
Youngman Kim ◽  
Sung-Ho Choo

ABSTRACTThe mechanical properties of thin film materials are known to be different from those of bulk materials, which are generally overlooked in practice. The difference in mechanical properties can be misleading in the estimation of residual stress states in micro-gas sensors with multi-layer structures during manufacturing and in service.In this study the residual stress of each film layer in a micro-gas sensor was measured according to the five difference sets of film stacking structure used for the sensor. The Pt thin film layer was found to have the highest tensile residual stress, which may affect the reliability of the micro-gas sensor. For the Pt layer the changes in residual stress were measured as a function of processing variables and thermal cycling.


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