Large-Signal modeling of power GaN HEMTs including thermal effects

2007 ◽  
Author(s):  
German Torregrosa ◽  
Jesus Grajal ◽  
Marco Peroni ◽  
Antonio Serino ◽  
Antonio Nanni ◽  
...  
Keyword(s):  
Thermal Effects ◽  
Signal Modeling ◽  
Large Signal ◽  
Gan Hemts

On the large-signal modeling of AlGaN/GaN HEMTs for RF switching-mode power amplifiers design

2009 ◽  
Author(s):  
Anwar Jarndal ◽  
Pouya Aflaki ◽  
Louay Degachi ◽  
Ahmed Birafane ◽  
Ammar Kouki ◽  
...  
Keyword(s):  
Power Amplifiers ◽  
Signal Modeling ◽  
Large Signal ◽  
Gan Hemts ◽  
Switching Mode

On the large-signal modeling of High Power AlGaN/GaN HEMTs

2012 ◽  
Author(s):  
I. Angelov ◽  
M. Thorsell ◽  
K. Andersson ◽  
N. Rorsman ◽  
E. Kuwata ◽  
...  
Keyword(s):  
High Power ◽  
Signal Modeling ◽  
Large Signal ◽  
Gan Hemts

Temperature-Dependent Access Resistances in Large-Signal Modeling of Millimeter-Wave AlGaN/GaN HEMTs

2017 ◽  
Vol 65 (7) ◽  
pp. 2271-2278 ◽  
Author(s):  
Xiaodong Zhao ◽  
Yuehang Xu ◽  
Yonghao Jia ◽  
Yunqiu Wu ◽  
Ruimin Xu ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Signal Modeling ◽  
Large Signal ◽  
Temperature Dependent ◽  
Gan Hemts

scholarly journals Large-Signal Modeling of GaN HEMTs Using Hybrid GA-ANN, PSO-SVR and GPR Based Approaches

2020 ◽  
pp. 1-1
Author(s):  
Anwar Jarndal ◽  
Saddam Husain ◽  
Mohammad Hashmi ◽  
Fadhel M. Ghannouchi
Keyword(s):  
Signal Modeling ◽  
Large Signal ◽  
Gan Hemts

Large-signal modeling of large-size GaN HEMTs with a comprehensive extrinsic elements extraction algorithm

2010 ◽  
Vol 2 (1) ◽  
pp. 63-73 ◽  
Author(s):  
J. Alberto Zamudio-Flores ◽  
Samir Dahmani ◽  
Günter Kompa
Keyword(s):  
Model Verification ◽  
Small Signal ◽  
Signal Modeling ◽  
Large Signal ◽  
Signal Model ◽  
Gate Width ◽  
Small Signal Model ◽  
Pulsed Dc ◽  
Extraction Algorithm ◽  
Gan Hemts

This work presents a measurement-based physics-oriented large-signal modeling technique for GaN HEMTs. All the model elements are derived directly from pulsed-DC measurements and bias dependent small-signal model elements. The proposed small-signal model features a 12-element extrinsic network, which allows proper modeling of the complex parasitic effects present in large gate-width devices. A reliable generally applicable extrinsic extraction algorithm is presented. It is based on pinch-off S-parameter measurements and on a scanning procedure to find the optimal capacitance distribution. Results of applying the algorithm with measured data of a GaN HEMT with gate width of 3.2-mm prove the consistency of the formulation. Successful model verification is shown under pulsed-DC, single- and two-tone operations, showing accurate predictions versus measurements of IDS, Pout, gain, harmonics and IMD products.

Large-signal modeling methodology for GaN HEMTs for RF switching-mode power amplifiers design

2010 ◽  
Vol 21 (1) ◽  
pp. 45-51 ◽  
Author(s):  
Anwar Jarndal ◽  
Pouya Aflaki ◽  
Renato Negra ◽  
Ammar B. Kouki ◽  
Fadhel M. Ghannouchi
Keyword(s):  
Power Amplifiers ◽  
Signal Modeling ◽  
Large Signal ◽  
Modeling Methodology ◽  
Gan Hemts ◽  
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