Substrate temperature dependence of nanoparticle ZnO thin films deposited on flexible substrates by RF magnetron sputtering

2012 ◽  
Author(s):  
Nur Saradah Muhamad Sauki ◽  
Sukreen Hana Herman ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Flexible Substrates

Substrate Temperature Dependence of Transparent Conducting Al-Doped ZnO Thin Films Prepared by Magnetron Sputtering

1992 ◽  
Vol 31 (Part 2, No. 3A) ◽  
pp. L257-L260 ◽  
Author(s):  
Tadatsugu Minami ◽  
Hirotoshi Sato ◽  
Hideyuki Imamoto ◽  
Shinzo Takata
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Zno Thin Films ◽  
Transparent Conducting ◽  
Doped Zno

Structural Properties of Deposited ZnO Thin Films on Flexible Substrates at Various Substrate Temperatures and RF Power

2012 ◽  
Vol 576 ◽  
pp. 598-601
Author(s):  
Nur Sa’adah Muhamad Sauki ◽  
Sukreen Hana Herman ◽  
Hanafi Ani Mohd ◽  
Rusop Mahmood Mohamad
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Flexible Substrates ◽  
Rf Power ◽  
Sem Images ◽  
Substrate Temperatures

ZnO thin films were deposited on Teflon substrates by RF magnetron sputtering at different substrate temperature and different RF power. In this work, we investigated the dependence of the deposition rate and also the ZnO physical and electrical properties on the substrate temperature and RF power. It is observed that the deposition rate increased as the temperature and RF power increased. FE-SEM images confirmed that microstructure of the thin films consists of nanoparticles. XRD data confirmed that the ZnO thin films at various RF power and substrate temperature have (002) structure.

Enhancement of the Quality of the ZnO Thin Films by Optimizing the Process Parameters of High-Temperature RF Magnetron Sputtering

2007 ◽  
Vol 336-338 ◽  
pp. 581-584
Author(s):  
Chong Mu Lee ◽  
Choong Mo Kim ◽  
Sook Joo Kim ◽  
Yun Kyu Park
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Chamber Pressure ◽  
Zno Films ◽  
Band Edge Emission ◽  
Rf Power ◽  
Zno Film

ZnO thin films were deposited on sapphire (α-Al2O3) substrates by RF magnetron sputtering at substrate temperatures of 500, 600, 650 and 700°C for 3h at rf-powers ranging from 60 to 120 W. The FWHM of the XRD (0002) peak for the ZnO film was reduced down to 0.07° by optimizing the chamber pressure at a substrate temperature of 700°C. Sharp near-band-edge emission was observed in the photoluminescence (PL) spectrum for the ZnO film grown at room temperature. Excess RF power aggravates the crystallinity and the surface roughness of the ZnO thin film. Pole figure, AES and PL analysis results confirm us that RF magnetron sputtering offers ZnO films with a lower density of crystallographic defects. ZnO films with a high quality can be obtained by optimizing the substrate temperature, RF power, and pressure of the RF magnetron sputtering process.

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