Structural Properties of Deposited ZnO Thin Films on Flexible Substrates at Various Substrate Temperatures and RF Power

2012 ◽  
Vol 576 ◽  
pp. 598-601
Author(s):  
Nur Sa’adah Muhamad Sauki ◽  
Sukreen Hana Herman ◽  
Hanafi Ani Mohd ◽  
Rusop Mahmood Mohamad
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Flexible Substrates ◽  
Rf Power ◽  
Sem Images ◽  
Substrate Temperatures

ZnO thin films were deposited on Teflon substrates by RF magnetron sputtering at different substrate temperature and different RF power. In this work, we investigated the dependence of the deposition rate and also the ZnO physical and electrical properties on the substrate temperature and RF power. It is observed that the deposition rate increased as the temperature and RF power increased. FE-SEM images confirmed that microstructure of the thin films consists of nanoparticles. XRD data confirmed that the ZnO thin films at various RF power and substrate temperature have (002) structure.

Influence of Oxygen Addition and Substrate Temperature on Textured Growth of Al-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering

2002 ◽  
Vol 721 ◽  
Author(s):  
P. Kuppusami ◽  
K. Diesner ◽  
I. Sieber ◽  
K. Ellmer
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Oxygen Content ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Soda Lime Glass ◽  
Doped Zno ◽  
Oxygen Addition ◽  
Substrate Temperatures

AbstractSputtering of aluminium doped zinc oxide thin films from a ceramic ZnO:Al target requires a controlled addition of oxygen to the sputtering atmosphere in order to obtain films with low resistivity and high transparency. In this paper the influence of the oxygen addition and of the substrate temperature on the structural, morphological and electrical properties of ZnO:Al films is investigated. The oxygen addition leads to a minimum resistivity when the oxygen content during sputtering is 0.2%. This small amount of oxygen not only improves the transparency of the films, it also induces to a significant grain growth as revealed by scanning electron microscopy. A further increase of the oxygen content leads to highly resistive films, due to a complete oxidation of the dopant Al. As expected, higher substrate temperatures from about 373 to 673 K improve the of crystallinity and hence the resistivity. The lowest resistivity achieved was about 1.2.10-3 Ωcm. At still higher temperatures the resistivity increases which seems to be due to an outdiffusion of sodium into the ZnO:Al films from the soda lime glass, compensating part of the donors.

Enhancement of the Quality of the ZnO Thin Films by Optimizing the Process Parameters of High-Temperature RF Magnetron Sputtering

2007 ◽  
Vol 336-338 ◽  
pp. 581-584
Author(s):  
Chong Mu Lee ◽  
Choong Mo Kim ◽  
Sook Joo Kim ◽  
Yun Kyu Park
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Chamber Pressure ◽  
Zno Films ◽  
Band Edge Emission ◽  
Rf Power ◽  
Zno Film

ZnO thin films were deposited on sapphire (α-Al2O3) substrates by RF magnetron sputtering at substrate temperatures of 500, 600, 650 and 700°C for 3h at rf-powers ranging from 60 to 120 W. The FWHM of the XRD (0002) peak for the ZnO film was reduced down to 0.07° by optimizing the chamber pressure at a substrate temperature of 700°C. Sharp near-band-edge emission was observed in the photoluminescence (PL) spectrum for the ZnO film grown at room temperature. Excess RF power aggravates the crystallinity and the surface roughness of the ZnO thin film. Pole figure, AES and PL analysis results confirm us that RF magnetron sputtering offers ZnO films with a lower density of crystallographic defects. ZnO films with a high quality can be obtained by optimizing the substrate temperature, RF power, and pressure of the RF magnetron sputtering process.

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

RF Magnetron Sputtering Processed Transparent Conductive Aluminum Doped ZnO thin Films with Excellent Optical and Electrical Properties

2021 ◽  
Author(s):  
Chunhu Zhao ◽  
Junfeng Liu ◽  
Yixin Guo ◽  
Yanlin Pan ◽  
Xiaobo Hu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Band Model ◽  
Deposition Condition ◽  
Optical And Electrical Properties ◽  
Doped Zno

Abstract Aluminum doped ZnO thin films (AZO), which simultaneously transmit light and conduct electrical current, are widely applied in photovoltaic devices. To achieve high performance AZO thin films, the effects of RF magnetron sputtering conditions on the optical and electrical properties of the films has been explored. The optimized AZO thin films exhibit strong (002) orientated growth with hexagonal wurtzite structure. The minimum resistivity of 0.9Í10-3 Ω·cm, the highest carrier concentration of 2.8Í1020 cm-3, the best Hall mobility of 22.8 cm2·(V·s)-1 and average transmittance above 85% can be achieved at the optimum deposition condition of 0.2 Pa, 120 W and 200 °C. Considering the single parabolic band model, the bandgap shift by carrier concentration of the films can be attributed to the Burstein-Moss effect. The results indicate that RF magnetron sputtered AZO thin films are promising for solar cell applications relying on front contact layers.

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