A Global Self-Heating Model for Device Simulation

2000 ◽  
Author(s):  
T. Grasser ◽  
R. Quay ◽  
V. Palankovski ◽  
S. Selberherr
Keyword(s):  
Device Simulation ◽  
Self Heating ◽  
Heating Model

scholarly journals Computational analysis of the coal self-heating model in a dense rock massiv

2016 ◽  
Author(s):  
E.P. Feldman ◽  
◽  
N.O. Kalugina ◽  
O.V. Chesnokova ◽  
◽  
...  
Keyword(s):  
Computational Analysis ◽  
Self Heating ◽  
Heating Model

Advanced Self-heating Model and Methodology for Layout Proximity Effect in FinFET Technology

2020 ◽  
Author(s):  
Hai Jiang ◽  
Hyunchul Sagong ◽  
Jinju Kim ◽  
Hyewon Shim ◽  
Yoohwan Kim ◽  
...  
Keyword(s):  
Proximity Effect ◽  
Self Heating ◽  
Heating Model

Si/SiC Substrates for the Implementation of Linear-Doped Power LDMOS Studied with Device Simulation

2016 ◽  
Vol 858 ◽  
pp. 844-847 ◽  
Author(s):  
C.W. Chan ◽  
Yeganeh Bonyadi ◽  
Philip A. Mawby ◽  
Peter M. Gammon
Keyword(s):  
Silicon Carbide ◽  
Substantial Reduction ◽  
Device Simulation ◽  
Drift Region ◽  
Heating Effect ◽  
Saturation Current ◽  
Self Heating ◽  
Lower Resistance ◽  
Simulation Results

In this study, a 600 V LDMOSFET using a silicon-on-silicon carbide (Si/SiC) substrate is presented. An SOI counterpart is established with a linear-doped drift region the same as that of the Si/SiC transistor. Simulation results show that they perform similar off-state behaviours, both with a significant tunneling leakage emerging above 450 V at 300 K. In the on-state, the proposed structure has advantages over the SOI, namely lower resistance, higher saturation current and improved self-heating effect. Turn-off performance is also enhanced owing to substantial reduction of the drain-substrate capacitance. These are realised by an “IOS” (Insulator on Silicon) setup embedded in the Si/SiC structure.

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