2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)

Electron spin splitting in polarization-doped III-nitrides

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) ◽

10.1109/iscspc.2003.1354437 ◽

2005 ◽

Author(s):

V.I. Litvinov

Keyword(s):

Electron Spin ◽

Spin Splitting

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AlGaN-GaN HEMTs: material, device, circuit technology and applications

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) ◽

10.1109/iscspc.2003.1354449 ◽

2005 ◽

Author(s):

P. Parikh ◽

Y.-F. Wu ◽

P. Chavarkar ◽

M. Moore ◽

U.K. Mishra ◽

...

Keyword(s):

Gan Hemts ◽

Circuit Technology

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Self-heating effect on device characteristics of GaN/AlGaN HEMTs: 2D Monte Carlo device simulation

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) ◽

10.1109/iscspc.2003.1354447 ◽

2005 ◽

Author(s):

H.I. Fujishiro ◽

N. Mikami ◽

T. Takei ◽

M. Izawa ◽

T. Moku ◽

...

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Heating Effect ◽

Self Heating ◽

Monte Carlo Device Simulation

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Growth of GaN on a nanoscale periodic faceted Si substrate by metal organic vapor phase epitaxy

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) ◽

10.1109/iscspc.2003.1354425 ◽

2005 ◽

Cited By ~ 1

Author(s):

S.C. Lee ◽

X.Y. Sun ◽

S.D. Hersee ◽

J. Lee ◽

Y.-B. Ziang ◽

...

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Si Substrate ◽

Organic Vapor ◽

Metal Organic

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Micro-Raman scattering study of strain induced by compositional variation in single crystalline Si/sub 1-x/Ge/sub x/ discs

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) ◽

10.1109/iscspc.2003.1354435 ◽

2005 ◽

Author(s):

M.R. Islam ◽

M. Yamada

Keyword(s):

Raman Scattering ◽

Compositional Variation ◽

Single Crystalline ◽

Scattering Study

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Low threshold, CW, room temperature 1.50 μm GaAS-based lasers

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) ◽

10.1109/iscspc.2003.1354451 ◽

2005 ◽

Author(s):

S.R. Bank ◽

M.A. Wistey ◽

H.B. Yuen ◽

L.L. Goddard ◽

J.S. Harris

Keyword(s):

Room Temperature ◽

Low Threshold

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Comparison of GaSb p-n junction photodiodes fabricated using Cl/sub 2//Ar and Cl/sub 2//BCl/sub 3//CH/sub 4//Ar/H/sub 2/ plasma

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) ◽

10.1109/iscspc.2003.1354458 ◽

2005 ◽

Author(s):

V. Bhagwat ◽

J.P. Langer ◽

I. Bhat ◽

P.S. Dutta ◽

T. Refaat ◽

...

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Improvements in electrical and optical properties of low bandgap III-V antimonides by using isoelectronic dopants

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) ◽

10.1109/iscspc.2003.1354432 ◽

2005 ◽

Author(s):

A. Chandola ◽

Youngok Ko ◽

P.S. Dutta ◽

A. Zakel ◽

L. Gonzales ◽

...

Keyword(s):

Optical Properties ◽

Electrical And Optical Properties ◽

Low Bandgap

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Effects of thermal annealing on Ga/sub 0.3/In/sub 0.7/N/sub x/As/sub 1-x/ QDs grown on GaAs [001]

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) ◽

10.1109/iscspc.2003.1354431 ◽

2004 ◽

Author(s):

A. Nishikawa ◽

Y.G. Hong ◽

C.W. Tu

Keyword(s):

Thermal Annealing

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Growth and properties of n- and p-type ZnO

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767) ◽

10.1109/iscspc.2003.1354427 ◽

2004 ◽

Author(s):

C.W. Litton ◽

D.C. Look ◽

B.B. Claflin ◽

D.C. Reynolds ◽

G. Cantwell ◽

...

Keyword(s):

P Type

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2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Electron spin splitting in polarization-doped III-nitrides

AlGaN-GaN HEMTs: material, device, circuit technology and applications

Self-heating effect on device characteristics of GaN/AlGaN HEMTs: 2D Monte Carlo device simulation

Growth of GaN on a nanoscale periodic faceted Si substrate by metal organic vapor phase epitaxy

Micro-Raman scattering study of strain induced by compositional variation in single crystalline Si/sub 1-x/Ge/sub x/ discs

Low threshold, CW, room temperature 1.50 μm GaAS-based lasers

Comparison of GaSb p-n junction photodiodes fabricated using Cl/sub 2//Ar and Cl/sub 2//BCl/sub 3//CH/sub 4//Ar/H/sub 2/ plasma

Improvements in electrical and optical properties of low bandgap III-V antimonides by using isoelectronic dopants

Effects of thermal annealing on Ga/sub 0.3/In/sub 0.7/N/sub x/As/sub 1-x/ QDs grown on GaAs [001]

Growth and properties of n- and p-type ZnO

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2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Electron spin splitting in polarization-doped III-nitrides

AlGaN-GaN HEMTs: material, device, circuit technology and applications

Self-heating effect on device characteristics of GaN/AlGaN HEMTs: 2D Monte Carlo device simulation

Growth of GaN on a nanoscale periodic faceted Si substrate by metal organic vapor phase epitaxy

Micro-Raman scattering study of strain induced by compositional variation in single crystalline Si/sub 1-x/Ge/sub x/ discs

Low threshold, CW, room temperature 1.50 μm GaAS-based lasers

Comparison of GaSb p-n junction photodiodes fabricated using Cl/sub 2//Ar and Cl/sub 2//BCl/sub 3//CH/sub 4//Ar/H/sub 2/ plasma

Improvements in electrical and optical properties of low bandgap III-V antimonides by using isoelectronic dopants

Effects of thermal annealing on Ga/sub 0.3/In/sub 0.7/N/sub x/As/sub 1-x/ QDs grown on GaAs [001]

Growth and properties of n- and p-type ZnO

2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767)
Latest Publications