Dual-transistor oscillator circuit for BAW and SAW resonator excitation in wide motion resistance range

Author(s):  
A. V. Kosykh ◽  
Alexander N. Lepetaev ◽  
Sergei A. Zavjalov
1979 ◽  
Vol 14 (4) ◽  
pp. 753-757 ◽  
Author(s):  
S.D. Senturia ◽  
M.T. Fertsch

Author(s):  
Jeffery P. Huynh ◽  
Joseph P. Shannon ◽  
Richard W. Johnson ◽  
Mike Santana ◽  
Thomas Y. Chu ◽  
...  

Abstract Modifications directly to a transistor’s source/drain and polysilicon gate through the backside of a SOI device were made. Contact resistance data was obtained by creating contacts through the buried oxide layer of a manufactured test structure. A ring oscillator circuit was modified and the shift in oscillator frequency was measured. Finally, cross section images of the FIB created contacts were presented in the paper to illustrate the entire process.


2020 ◽  
Vol 20 (4) ◽  
pp. 8-27
Author(s):  
Mehdi Azadmehr ◽  
Igor Paprotny ◽  
Luca Marchetti
Keyword(s):  

Author(s):  
Benjamin K. Rhea ◽  
R. Chase Harrison ◽  
Frank T. Werner ◽  
Edmon Perkins ◽  
Robert N. Dean

1987 ◽  
Vol 24 (1) ◽  
pp. 115-116
Author(s):  
Keiji Kogure ◽  
Shigemitsu Isobe

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