scholarly journals Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current

2018 ◽  
Vol 328 ◽  
pp. 30-34 ◽  
Author(s):  
Qi Wang ◽  
Yaomi Itoh ◽  
Tohru Tsuruoka ◽  
Masakazu Aono ◽  
Deyan He ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Leakage Current ◽  
Gate Bias ◽  
Gate Leakage Current ◽  
Gate Leakage

Property of an AlGaN/GaN MIS Diode with Si3N4/Al2O3 Bilayer Gate Dielectric Films

2015 ◽  
Vol 815 ◽  
pp. 30-35
Author(s):  
Ling Yan Shen ◽  
Xin Hong Cheng ◽  
Zhong Jian Wang ◽  
Duo Cao ◽  
Li Zheng ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Schottky Diodes ◽  
Film Structure ◽  
Dielectric Films ◽  
High Electron ◽  
Gate Bias ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
2Deg Density

Metal-insulator-semiconductor (MIS) diodes with Si3N4/Al2O3 bilayer gate dielectric films deposited on an AlGaN/GaN heterostructure were fabricated, where the Si3N4 layer played a role of etching stopped layer to protect the Al2O3 film from being damaged. Compared with traditional Schottky diodes, a distinct suppression of gate leakage current was achieved for the MIS diodes both at forward and reverse bias, and the dominant leakage current mechanism is Fowler–Nordheim tunneling. The 2DEG density extracted from C-V curves was 3~7 ́1013cm-2, in the same order of magnitude as Schottky diodes and hall measurement. Although the existence of the bilayer dielectric did not affect the 2DEG density at the interface of AlGaN/GaN, Si3N4 layer shared more gate bias and led to more gate bias required to deplete 2DEG and turn down the devices, moreover, Si3N4 layer had no effect on suppressing the forward or reverse gate leakage current due to its narrow band gap width and band bending compared with a single Al2O3 film. The experimental results provided a reference for the design of gate dielectric film structure for AlGaN/GaN high-electron-mobility transistors (HEMTs).

Reduction of On-Resistance in Ion-Implanted GaN/AlGaN/GaN HEMTs with Low Gate Leakage Current

2008 ◽  
Vol 128 (6) ◽  
pp. 885-889
Author(s):  
Kazuki Nomoto ◽  
Masataka Satoh ◽  
Tohru Nakamura
Keyword(s):  
Leakage Current ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts ◽  
Ion Implanted

Fast Gate Leakage Current Monitor With Large Dynamic Range

2021 ◽  
pp. 1-1
Author(s):  
Kushagra Bhatheja ◽  
Xiankun Jin ◽  
Matthew Strong ◽  
Degang Chen
Keyword(s):  
Leakage Current ◽  
Dynamic Range ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Large Dynamic Range

Defect spectroscopy using 1/fγ noise of gate leakage current in ultrathin oxide MOSFETs

2003 ◽  
Vol 47 (11) ◽  
pp. 1973-1981 ◽  
Author(s):  
Jonghwan Lee ◽  
Gijs Bosman
Keyword(s):  
Leakage Current ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Ultrathin Oxide

Reduction of on-resistance in ion-implanted GaN/AlGaN/GaN HEMTs with low gate leakage current

2010 ◽  
Vol 93 (6) ◽  
pp. 19-24 ◽  
Author(s):  
Kazuki Nomoto ◽  
Masataka Satoh ◽  
Tohru Nakamura
Keyword(s):  
Leakage Current ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts ◽  
Ion Implanted

Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors

2005 ◽  
Vol 86 (25) ◽  
pp. 253511 ◽  
Author(s):  
P. Kordoš ◽  
J. Bernát ◽  
M. Marso ◽  
H. Lüth ◽  
F. Rampazzo ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Current Collapse

Influence of gate leakage current induced shot noise on the Minimum Noise Figure of InAlAs/InGaAs double-gate HEMT

2017 ◽  
Vol 109 ◽  
pp. 13-22 ◽  
Author(s):  
Monika Bhattacharya ◽  
Jyotika Jogi ◽  
R.S. Gupta ◽  
Mridula Gupta
Keyword(s):  
Leakage Current ◽  
Shot Noise ◽  
Noise Figure ◽  
Double Gate ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Minimum Noise ◽  
Minimum Noise Figure
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