Electrical characteristics of MIS capacitors with BST thin films deposited on n-Si(100) by the sol-gel method

Author(s):  
C.W. Law ◽  
K.Y. Tong ◽  
K.L. Wong ◽  
J.H. Li ◽  
Kun Li
2002 ◽  
Vol 45 (1) ◽  
pp. 31-38 ◽  
Author(s):  
Jun-Bo Bao ◽  
Tian-Ling Ren ◽  
Jian-She Liu ◽  
Xiao-Ning Wang ◽  
Li-Tian Liu ◽  
...  

1995 ◽  
Vol 10 (1-4) ◽  
pp. 113-121 ◽  
Author(s):  
Miroslav Sedlar ◽  
Michael Sayer ◽  
Vasant Chivukula

2010 ◽  
Vol 175 (2) ◽  
pp. 181-184 ◽  
Author(s):  
Cheng-Hsing Hsu ◽  
Ching-Fang Tseng ◽  
Chun-Hung Lai ◽  
Hsin-Han Tung ◽  
Shih-Yao Lin

2010 ◽  
Vol 105-106 ◽  
pp. 676-678
Author(s):  
Zong Hui Zhou ◽  
Jing Liu

A series of BST(Ba0.65Sr0.35TiO3) sol with different viscosity were prepared by using Ba(CH3COOH)2, Sr(CH3COOH)2 and Ti(OC4H9)4 as raw materials. The BST thin films were fabricated by sol-gel method and spin-coating process on Si(100) substrates. The effect of sol viscosity on crystallization, microstructure and dielectric properties of BST thin films were analyzed by using X-ray diffractometry, scanning electron microscopy and impedance phase analyzer. The results show that the BST films coated by sol with viscosity of 3.0cp and annealed at 750°C for 1h are basically non-crystalline. The crystallization degree increases with the increase of sol viscosity at the same annealing temperature. The ABO3 perovskite structure is formed when the sol viscosity increases to 3.5cp. With further increasing sol viscosity to 6.0cp, the crystal grains of the film grow well and range very compact, the surface become smooth, and the films have optimal dielectric properties.


2011 ◽  
Vol 10 (2) ◽  
pp. 187-192 ◽  
Author(s):  
Ramona-Crina Suciu ◽  
Marcela Corina Rosu ◽  
Teofil Danut Silipas ◽  
Emil Indrea ◽  
Violeta Popescu ◽  
...  

2014 ◽  
Vol 23 (4) ◽  
pp. 047805 ◽  
Author(s):  
Meng-Meng Cao ◽  
Xiao-Ru Zhao ◽  
Li-Bing Duan ◽  
Jin-Ru Liu ◽  
Meng-Meng Guan ◽  
...  

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