Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)
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Influences of processing technique on electrical characteristics of TVS used in communication systems

Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) ◽

10.1109/hkedm.1998.740199 ◽

1998 ◽

Author(s):

X.R. Zheng ◽

B.Y. Liu ◽

Bin Li ◽

P.T. Lai

Keyword(s):

Communication Systems ◽

Processing Technique ◽

Electrical Characteristics

Fabrication and characterization of porous polycrystalline silicon resistive sensor

Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) ◽

10.1109/hkedm.1998.740209 ◽

1998 ◽

Author(s):

P. Han ◽

H. Wong ◽

M. Poon

Keyword(s):

Polycrystalline Silicon ◽

Porous Polycrystalline ◽

Resistive Sensor ◽

Fabrication And Characterization

Proceedings 1998 IEEE Hong Kong Electron Devices Meeting [front matter]

Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) ◽

10.1109/hkedm.1998.740175 ◽

1998 ◽

Author(s):

H. Okuno ◽

T. Tominaka ◽

S. Fujishima ◽

T. Mitsumoto ◽

T. Kubo ◽

...

Keyword(s):

Hong Kong ◽

Electron Devices

Interdiffused InGaAs/GaAs strained multiple quantum well infrared photodetector

Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) ◽

10.1109/hkedm.1998.740178 ◽

1998 ◽

Author(s):

A.S.W. Lee ◽

G. Karunasiri

Keyword(s):

Quantum Well ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Infrared Photodetector ◽

Quantum Well Infrared Photodetector

A new approach to study the channel charge partition of MOS transistors during non-quasi-static (NQS) turn-on

Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) ◽

10.1109/hkedm.1998.740202 ◽

1998 ◽

Author(s):

Wai-kit Lee ◽

Mansun Chan

Keyword(s):

Mos Transistors ◽

New Approach ◽

Turn On

Electronic industry in the 21st century: opportunities and challenges for China

Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) ◽

10.1109/hkedm.1998.740381 ◽

1998 ◽

Author(s):

P.K. Ko

Keyword(s):

21St Century ◽

Electronic Industry

Spreading-Resistance Temperature Sensor on SOI

Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) ◽

10.1109/hkedm.1998.740208 ◽

1998 ◽

Cited By ~ 1

Author(s):

P.T. Lai ◽

Bin Li ◽

C.L. Chan

Keyword(s):

Temperature Sensor ◽

Spreading Resistance

Wafer-level electromigration reliability test for deep-submicron interconnect metallization

Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) ◽

10.1109/hkedm.1998.740210 ◽

1998 ◽

Cited By ~ 5

Author(s):

Wye Loh ◽

Man Tse ◽

Lap Chan ◽

Keng Eo

Keyword(s):

Deep Submicron ◽

Reliability Test ◽

Wafer Level

Modeling for the subthreshold current in SOI short channel gate controlled hybrid transistor

Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) ◽

10.1109/hkedm.1998.740201 ◽

1998 ◽

Cited By ~ 1

Author(s):

Ru Huang ◽

Yang Yuan Wang ◽

RuQi Han

Keyword(s):

Short Channel ◽

Subthreshold Current ◽

Channel Gate

Optimization of textured-surface light emitting diode

Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368) ◽

10.1109/hkedm.1998.740176 ◽

1998 ◽

Author(s):

E.H. Li ◽

Chun-Chung Chan ◽

P.C.K. Kwok

Keyword(s):

Light Emitting Diode ◽

Textured Surface ◽

Light Emitting

Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Influences of processing technique on electrical characteristics of TVS used in communication systems

Fabrication and characterization of porous polycrystalline silicon resistive sensor

Proceedings 1998 IEEE Hong Kong Electron Devices Meeting [front matter]

Interdiffused InGaAs/GaAs strained multiple quantum well infrared photodetector

A new approach to study the channel charge partition of MOS transistors during non-quasi-static (NQS) turn-on

Electronic industry in the 21st century: opportunities and challenges for China

Spreading-Resistance Temperature Sensor on SOI

Wafer-level electromigration reliability test for deep-submicron interconnect metallization

Modeling for the subthreshold current in SOI short channel gate controlled hybrid transistor

Optimization of textured-surface light emitting diode

Proceedings 1998 Hong Kong Electron Devices Meeting (Cat. No.98TH8368)
Latest Publications