Design of X-band 4×4 On-chip Butler Matrix Based on 0.18µm SiGe BiCMOS Process

2019 ◽  
Author(s):  
Xiaohui Tao ◽  
Rui Cao ◽  
Zhuang Li ◽  
Dawei Rong ◽  
Lihui Jiang ◽  
...  
Keyword(s):  
Butler Matrix ◽  
X Band ◽  
Sige Bicmos ◽  
Bicmos Process ◽  
On Chip

scholarly journals An X-Band low-power and low-phase-noise VCO using bondwire inductor

2009 ◽  
Vol 7 ◽  
pp. 243-247 ◽  
Author(s):  
K. Hu ◽  
F. Herzel ◽  
J. C. Scheytt
Keyword(s):  
Low Power ◽  
Phase Noise ◽  
Flicker Noise ◽  
Satellite Communications ◽  
Voltage Controlled Oscillator ◽  
X Band ◽  
Sige Bicmos ◽  
Bicmos Process ◽  
On Chip ◽  
Low Phase Noise

Abstract. In this paper a low-power low-phase-noise voltage-controlled-oscillator (VCO) has been designed and, fabricated in 0.25 μm SiGe BiCMOS process. The resonator of the VCO is implemented with on-chip MIM capacitors and a single aluminum bondwire. A tail current filter is realized to suppress flicker noise up-conversion. The measured phase noise is −126.6 dBc/Hz at 1 MHz offset from a 7.8 GHz carrier. The figure of merit (FOM) of the VCO is −192.5 dBc/Hz and the VCO core consumes 4 mA from a 3.3 V power supply. To the best of our knowledge, this is the best FOM and the lowest phase noise for bondwire VCOs in the X-band. This VCO will be used for satellite communications.

scholarly journals An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

2016 ◽  
Vol 9 (5) ◽  
pp. 965-976
Author(s):  
Rasmus S. Michaelsen ◽  
Tom K. Johansen ◽  
Kjeld M. Tamborg ◽  
Vitaliy Zhurbenko ◽  
Lei Yan
Keyword(s):  
Power Level ◽  
Schottky Diodes ◽  
Local Oscillator ◽  
Critical Parameters ◽  
Center Frequency ◽  
X Band ◽  
Sige Bicmos ◽  
Bicmos Process ◽  
Marchand Balun ◽  
Balanced Mixer

In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band. The full mixer has a size of 2050 μm × 1000 μm.

Highly Linear Ku-Band SiGe PIN Diode Phase Shifter in Standard SiGe BiCMOS Process

2010 ◽  
Vol 20 (1) ◽  
pp. 37-39 ◽  
Author(s):  
Le Wang ◽  
P. Sun ◽  
Yu You ◽  
A. Mikul ◽  
R. Bonebright ◽  
...  
Keyword(s):  
Phase Shifter ◽  
Pin Diode ◽  
Sige Bicmos ◽  
Bicmos Process ◽  
Ku Band
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