scholarly journals An X-Band low-power and low-phase-noise VCO using bondwire inductor

2009 ◽  
Vol 7 ◽  
pp. 243-247 ◽  
Author(s):  
K. Hu ◽  
F. Herzel ◽  
J. C. Scheytt
Keyword(s):  
Low Power ◽  
Phase Noise ◽  
Flicker Noise ◽  
Satellite Communications ◽  
Voltage Controlled Oscillator ◽  
X Band ◽  
Sige Bicmos ◽  
Bicmos Process ◽  
On Chip ◽  
Low Phase Noise

Abstract. In this paper a low-power low-phase-noise voltage-controlled-oscillator (VCO) has been designed and, fabricated in 0.25 μm SiGe BiCMOS process. The resonator of the VCO is implemented with on-chip MIM capacitors and a single aluminum bondwire. A tail current filter is realized to suppress flicker noise up-conversion. The measured phase noise is −126.6 dBc/Hz at 1 MHz offset from a 7.8 GHz carrier. The figure of merit (FOM) of the VCO is −192.5 dBc/Hz and the VCO core consumes 4 mA from a 3.3 V power supply. To the best of our knowledge, this is the best FOM and the lowest phase noise for bondwire VCOs in the X-band. This VCO will be used for satellite communications.

scholarly journals On-Chip Voltage-Controlled Oscillator Based on a Center-Tapped Switched Inductor Using GaN-on-SiC HEMT Technology

Electronics ◽  
2021 ◽  
Vol 10 (23) ◽  
pp. 2928
Author(s):  
Hsuan-Ling Kao
Keyword(s):  
Phase Noise ◽  
Output Power ◽  
Tuning Range ◽  
Frequency Tuning ◽  
High Electron Mobility Transistors ◽  
Voltage Controlled Oscillator ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
On Chip ◽  
Low Phase Noise

This study presents a voltage-controlled oscillator (VCO) in a cross-coupled pair configuration using a multi-tapped switched inductor with two switch-loaded transformers in 0.5 µm GaN technology. Two switch-loaded transformers are placed at the inner and outer portions of the multi-tapped inductor. All the switches are turned off to obtain the lowest sub-band. The outer transformer with three pairs of switches is turned on alternately to provide three sub-band modes. A pair of switches at the inner transformer provide a high-frequency band. Two switch-loaded transformers are turned on to provide the highest sub-band. Six modes are selected to provide a wide tuning range. The frequency tuning range (FTR) of the VCO is 27.8% from 3.81 GHz to 8.04 GHz with a varactor voltage from 13 V to 22 V. At a 1 MHz frequency offset from the carrier frequency of 4.27 GHz, the peak phase noise is −119.17 dBc/Hz. At a power supply of 12 V, the output power of the carrier at 4.27 GHz is 20.9 dBm. The figure of merit is −186.93 dB because the VCO exhibits a high output power, low phase noise, and wide FTR. To the best of the author’s knowledge, the FTR in VCOs made of GaN-based high electron mobility transistors is the widest reported thus far.

scholarly journals K-Band Low Phase Noise VCO Based on Q-Boosted Switched Inductor

Electronics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1132 ◽  
Author(s):  
Zhe Chen ◽  
Ji-Xin Chen ◽  
Pinpin Yan ◽  
Debin Hou ◽  
Fang Zhu
Keyword(s):  
Resonance Frequency ◽  
Phase Noise ◽  
Quality Factor ◽  
Eddy Current ◽  
Noise Voltage ◽  
Secondary Coil ◽  
Voltage Controlled Oscillator ◽  
Bicmos Process ◽  
Low Phase Noise ◽  
K Band

In this article, the development of the K-band low phase noise voltage-controlled oscillator (VCO) based on Q-boosted switched inductor is presented. Compared with the conventional switched inductor, the eddy current will be decreased using a 2-turn secondary coil, and then the dissipated power from the switch on-resistance will also be decreased, leading to a boosted inductor Q at switch ON-state. The equivalent inductance, quality factor, and self-resonance frequency at switch ON/OFF states are analyzed and derived. For comparison, K-band VCOs have been designed and fabricated in a 130nm BiCMOS process with the Q-boosted and conventional switched inductors. Measured results show that the phase noise has been typically improved by 2–5dB at 100 kHz and 1 MHz offset at switch ON-state, using the Q-boosted switched inductor.

A 400 μW Near-Threshold Feedback Class-C VCO with Auto Amplitude Control

2018 ◽  
Vol 27 (05) ◽  
pp. 1850072
Author(s):  
Chenggang Yan ◽  
Chen Hu
Keyword(s):  
Low Power ◽  
Phase Noise ◽  
Feedback Loop ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Amplitude Control ◽  
Ultra Low Power ◽  
Class C ◽  
Low Phase Noise ◽  
Near Threshold

A 400[Formula: see text][Formula: see text]W near-threshold supply class-C voltage controlled oscillator (VCO) with amplitude feedback loop and auto amplitude control (AAC) is proposed in this paper. The amplitude feedback loop and AAC ensure the robust startup of the proposed VCO and automatically adapts it to the class-C mode in steady state. Consequently, ultra-low power can be achieved in AAC mode and low phase noise, high swing can be achieved in AAC off mode. The proposed VCO with AAC gets ultra-low power consumption by limiting the oscillating amplitude and driving the proposed VCO into the deep Class-C mode. Additionally, the peak value detector is employed in this work to boost the controlling voltage of capacitors bank. Thus, a low on resistance of switch transistors is obtained, which increases the Q value of capacitors bank. The simulated phase noise is [Formula: see text]124.5[Formula: see text]dBc/Hz at 1[Formula: see text]MHz offset with the 1.16[Formula: see text]GHz oscillation frequency. In this case, the figure-of-merit including tuning range (FOMT) of proposed VCO is [Formula: see text]195[Formula: see text]dBc/Hz. The proposed VCO is fabricated in SMIC 40[Formula: see text]nm CMOS process and consumes 0.62[Formula: see text]mA from 0.65[Formula: see text]V supply. The measured phase noise is [Formula: see text]109[Formula: see text]dBc/Hz and FOMT is [Formula: see text]179[Formula: see text]dBc/Hz.

A LOW POWER PUSH–PUSH VCO USING MULTI-COUPLED LC TANKS

2013 ◽  
Vol 22 (10) ◽  
pp. 1340035
Author(s):  
MAHALINGAM NAGARAJAN ◽  
KAIXUE MA ◽  
KIAT SENG YEO ◽  
WEI MENG LIM
Keyword(s):  
Phase Noise ◽  
Tuning Range ◽  
Frequency Tuning ◽  
Voltage Controlled Oscillator ◽  
Fully Integrated ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Large Tuning Range ◽  
Low Phase Noise ◽  
Lc Tanks

A fully integrated push–push voltage controlled oscillator (VCO) working in K-band with a large tuning range and a low phase noise fabricated in a 0.18 μm SiGe BiCMOS technology is presented. Multi-coupled LC tanks are used to improve the tuning range, power consumption and phase noise. Digital tuning varactors are used to maintain a low VCO tuning sensitivity (K VCO ) and maximum frequency overlap. The VCO achieves a frequency tuning range (FTR) of 17% at 12 GHz, a phase noise of -106.62 dBc/Hz at 1 MHz offset and consumes 7 mW from 1.8 V supply.

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