scholarly journals An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun

2016 ◽  
Vol 9 (5) ◽  
pp. 965-976
Author(s):  
Rasmus S. Michaelsen ◽  
Tom K. Johansen ◽  
Kjeld M. Tamborg ◽  
Vitaliy Zhurbenko ◽  
Lei Yan
Keyword(s):  
Power Level ◽  
Schottky Diodes ◽  
Local Oscillator ◽  
Critical Parameters ◽  
Center Frequency ◽  
X Band ◽  
Sige Bicmos ◽  
Bicmos Process ◽  
Marchand Balun ◽  
Balanced Mixer

In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band. The full mixer has a size of 2050 μm × 1000 μm.

Design of a broadband passive X-band double-balanced mixer in SiGe HBT technology

2014 ◽  
Vol 6 (3-4) ◽  
pp. 235-242 ◽  
Author(s):  
Rasmus S. Michaelsen ◽  
Tom K. Johansen ◽  
Kjeld M. Tamborg ◽  
Vitaliy Zhurbenko
Keyword(s):  
Local Oscillator ◽  
Center Frequency ◽  
High Loss ◽  
Sige Hbt ◽  
Lumped Element ◽  
X Band ◽  
Passive Mixing ◽  
Marchand Balun ◽  
Better Than ◽  
Balanced Mixer

In this paper, a passive double-balanced mixer in SiGe HBT technology is presented. Owing to lack of suitable passive mixing elements in the technology, the mixing elements are formed by diode-connected HBTs. The mixer uses lumped element Marchand baluns on both the local oscillator (LO) and the radio frequency (RF) port. A break out of the Marchand balun is measured. This demonstrates good phase and magnitude match of 0.7° and 0.11 dB, respectively. The Marchand baluns are broadband with a measured 3 dB bandwidth of 6.4 GHz, while still having a magnitude imbalance better than 0.4 dB and a phase imbalance better than 5°. Unfortunately with a rather high loss of 2.5 dB, mainly due to the low Q-factor of the inductors used. The mixer is optimized for use in doppler radars and is highly linear with a 1 dB compression point above 12 dBm IIP2of 66 dBm. The conversion gain at the center frequency of 8.5 GHz is −9.8 dB at an LO drive level of 15 dBm. The whole mixer is very broadband with 3 dB bandwidth from 7 to 12 GHz covering the entire X-band. The LO–IF, RF–IF, and RF–LO isolation is better than 46, 36, and 36 dB, respectively, in the entire band of operation.

scholarly journals Design and Measurement of a 0.67 THz Biased Sub-Harmonic Mixer

Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 161
Author(s):  
Guangyu Ji ◽  
Dehai Zhang ◽  
Jin Meng ◽  
Siyu Liu ◽  
Changfei Yao
Keyword(s):  
Glass Substrate ◽  
Schottky Diodes ◽  
Local Oscillator ◽  
Center Frequency ◽  
Measured Signal ◽  
Quartz Glass Substrate ◽  
Conversion Loss ◽  
Side Band ◽  
Harmonic Mixer ◽  
Series Configuration

To effectively reduce the requirement of Local Oscillator (LO) power, this paper presents the design and measurement of a biased sub-harmonic mixer working at the center frequency of 0.67 THz in hybrid integration. Two discrete Schottky diodes were placed across the LO waveguide in anti-series configuration on a 50 μm thick quartz-glass substrate, and chip capacitors were not required. At the driven of 3 mW@335 GHz and 0.35 V, the mixer had a minimum measured Signal Side-Band (SSB) conversion loss of 15.3 dB at the frequency of 667 GHz. The typical conversion loss is 18.2 dB in the band of 650 GHz to 690 GHz.

scholarly journals An X-Band low-power and low-phase-noise VCO using bondwire inductor

2009 ◽  
Vol 7 ◽  
pp. 243-247 ◽  
Author(s):  
K. Hu ◽  
F. Herzel ◽  
J. C. Scheytt
Keyword(s):  
Low Power ◽  
Phase Noise ◽  
Flicker Noise ◽  
Satellite Communications ◽  
Voltage Controlled Oscillator ◽  
X Band ◽  
Sige Bicmos ◽  
Bicmos Process ◽  
On Chip ◽  
Low Phase Noise

Abstract. In this paper a low-power low-phase-noise voltage-controlled-oscillator (VCO) has been designed and, fabricated in 0.25 μm SiGe BiCMOS process. The resonator of the VCO is implemented with on-chip MIM capacitors and a single aluminum bondwire. A tail current filter is realized to suppress flicker noise up-conversion. The measured phase noise is −126.6 dBc/Hz at 1 MHz offset from a 7.8 GHz carrier. The figure of merit (FOM) of the VCO is −192.5 dBc/Hz and the VCO core consumes 4 mA from a 3.3 V power supply. To the best of our knowledge, this is the best FOM and the lowest phase noise for bondwire VCOs in the X-band. This VCO will be used for satellite communications.

Highly Linear Ku-Band SiGe PIN Diode Phase Shifter in Standard SiGe BiCMOS Process

2010 ◽  
Vol 20 (1) ◽  
pp. 37-39 ◽  
Author(s):  
Le Wang ◽  
P. Sun ◽  
Yu You ◽  
A. Mikul ◽  
R. Bonebright ◽  
...  
Keyword(s):  
Phase Shifter ◽  
Pin Diode ◽  
Sige Bicmos ◽  
Bicmos Process ◽  
Ku Band

A semi-lumped microstrip UWB bandpass filter

2009 ◽  
Vol 1 (1) ◽  
pp. 57-64 ◽  
Author(s):  
Darine Kaddour ◽  
Jean-Daniel Arnould ◽  
Philippe Ferrari
Keyword(s):  
Group Delay ◽  
Bandpass Filter ◽  
Filter Design ◽  
Sensitivity Study ◽  
Critical Parameters ◽  
Center Frequency ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Low Pass ◽  
High Pass

In this paper, a miniaturized bandpass filter for ultra-wide-band applications is proposed. It is based on the embedding of high-pass structures in a low-pass filter. A semi-lumped technology combining surface-mounted capacitors and transmission lines has been used. The filter design rules have been carried out. Furthermore, two filters having a 3-dB fractional bandwidth of 142 and 150%, centered at 0.77 and 1 GHz, respectively, have been realized for a proof of concept. Measured characteristics, in good agreement with simulations, show attractive properties of return loss (|S11| <−18 dB), insertion loss (<0.3 dB), and a maximum group delay and group delay variation of 2 and 1.3 ns, respectively. A distributed filter based on the same low-pass/high-pass approach has been also realized and measured for comparison. The size reduction reaches 85% for the semi-lumped filter, and its selectivity is improved with a shape factor of 1.3:1 instead of 1.5:1. The semi-lumped filter's drawback is related to a smaller rejection bandwidth compared to the distributed one. To improve the high-frequency stopband, an original technique for spurious responses suppression based on capacitively loaded stubs has been proposed. Even if the performances do not reach that obtained for the distributed approach, with this technique spurious responses are pushed until eight times the center frequency. A sensitivity study vs. critical parameters has also been carried out, showing the robustness of the design.

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