An extra low noise 1.8 GHz voltage controlled oscillator in 0.35 SiGe BiCMOS technology

2003 ◽  
Author(s):  
L. Dermentzoglou ◽  
G. Kamoulakos ◽  
A. Arapoyanni
Keyword(s):  
Low Noise ◽  
Voltage Controlled Oscillator ◽  
Bicmos Technology ◽  
Sige Bicmos

scholarly journals W-band voltage-controlled oscillator design in 130 nm SiGe BiCMOS technology

2019 ◽  
Vol 30 ◽  
pp. 01006
Author(s):  
Alexander Kozhemyakin ◽  
Ivan Kravchenko
Keyword(s):  
Power Consumption ◽  
Output Power ◽  
Design Flow ◽  
Voltage Controlled Oscillator ◽  
Automotive Radar ◽  
W Band ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Fundamental Oscillation ◽  
Simulation Results

The paper presents design flow and simulation results of the W-band fundamental voltage-controlled oscillator in 0.13 μm SiGe BiCMOS technology for an automotive radar application. Oscillator provides fundamental oscillation range of 76.8 GHz to 81.2 GHz. According to simulation results phase noise is –89.3 dBc/Hz at 1 MHz offset, output power is –5.6 dBm and power consumption is 39 mW from 3.3 V source.

A Full Integrated LNA in 0.18μm SiGe BiCMOS Technology

2013 ◽  
Vol 380-384 ◽  
pp. 3287-3291
Author(s):  
Bing Liang Yu ◽  
Xiao Ning Xie ◽  
Wen Yuan Li
Keyword(s):  
Wireless Local Area Network ◽  
Local Area Network ◽  
Noise Figure ◽  
Impedance Matching ◽  
Local Area ◽  
Low Noise ◽  
Area Network ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Noise Amplifier

A fully integrated low noise amplifier (LNA) for wireless local area network (WLAN) application is presents. The circuit is fabricated in 0.18μm SiGe BiCMOS technology. For the low noise figure, a feedback path is introduced into the traditional inductively degenerated common emitter cascade LNA, which decreases the inductance for input impedance matching, therefore reduces the thermal noise caused by loss resistor. Impedance matching and noise matching are achieved at the same time. Measured results show that the resonance point of the output resonance network shifts from 2.4GHz to 2.8GHz, due to the parasitic effects at the output. At the frequency of 2.8GHz, the LNA achieves 2.2dB noise figure, 19.4dB power gain. The core circuit consumes only 13mW from a 1.8V supply and occupies less than 0.5mm2.

X-band low noise amplifier using SiGe BiCMOS technology

2005 ◽  
Author(s):  
V.J. Patel ◽  
H.S. Axtell ◽  
C.L. Cerny ◽  
G.L. Creech ◽  
R.G. Drangmeister ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
X Band ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Noise Amplifier

A 20-GHz low-noise amplifier with active balun in a 0.25-/spl mu/m SiGe BICMOS technology

2005 ◽  
Vol 40 (10) ◽  
pp. 2092-2097 ◽  
Author(s):  
B. Welch ◽  
K.T. Kornegay ◽  
Hyun-Min Park ◽  
J. Laskar
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Active Balun ◽  
Noise Amplifier
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