Simulation of Self-Heating and Bulk Trapping Effects on Drain Current Static and Transient Characteristics of AlGaN/GaN HEMTs

2018 ◽  
Author(s):  
P. Vigneshwara Raja ◽  
Nandita DasGupta ◽  
Amitava DasGupta
Keyword(s):  
Drain Current ◽  
Transient Characteristics ◽  
Self Heating ◽  
Gan Hemts ◽  
Trapping Effects

scholarly journals An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effects

2020 ◽  
Vol 10 (2) ◽  
pp. 1791
Author(s):  
A. Bellakhdar ◽  
A. Telia ◽  
J. L. Coutaz
Keyword(s):  
Analytical Model ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Published Data ◽  
High Electron ◽  
Self Heating ◽  
Heating Effects ◽  
Cap Layer ◽  
Gan Hemts ◽  
Sheet Density

We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. Spontaneous and piezoelectric polarizations at Al (Ga,In)N/GaN and GaN/Al(Ga,In)N interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the two-dimensional electron gas (2DEG), leading to a decrease of the drain current, and that n+-doped GaN cap layer provides a higher sheet density than undoped one. In n+GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n+GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface.

Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs

2014 ◽  
Vol 35 (3) ◽  
pp. 345-347 ◽  
Author(s):  
Yamin Zhang ◽  
Shiwei Feng ◽  
Hui Zhu ◽  
Chunsheng Guo ◽  
Bing Deng ◽  
...  
Keyword(s):  
Transient Response ◽  
Drain Current ◽  
Current Transient ◽  
Self Heating ◽  
Gan Hemts
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