scholarly journals An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effects

2020 ◽  
Vol 10 (2) ◽  
pp. 1791
Author(s):  
A. Bellakhdar ◽  
A. Telia ◽  
J. L. Coutaz
Keyword(s):  
Analytical Model ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Published Data ◽  
High Electron ◽  
Self Heating ◽  
Heating Effects ◽  
Cap Layer ◽  
Gan Hemts ◽  
Sheet Density

We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. Spontaneous and piezoelectric polarizations at Al (Ga,In)N/GaN and GaN/Al(Ga,In)N interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the two-dimensional electron gas (2DEG), leading to a decrease of the drain current, and that n+-doped GaN cap layer provides a higher sheet density than undoped one. In n+GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n+GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface.

Integrated GaN/AlGaN/GaN HEMTs with Preciously Controlled Resistance on Silicon Substrate Fabricated by Ion Implantation

2008 ◽  
Vol 1068 ◽  
Author(s):  
Kazuki Nomoto ◽  
Tomo Ohsawa ◽  
Masataka Satoh ◽  
Tohru Nakamura
Keyword(s):  
Ion Implantation ◽  
Electron Mobility ◽  
Silicon Substrate ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Hemts ◽  
Ion Implanted

ABSTRACTMultiple ion-implanted GaN/AlGaN/GaN high electron-mobility transistors (HEMTs) and preciously controlled ion-implanted resistors integrated on silicon substrate are reported. Using ion implantation into source/drain (S/D) regions, the performances were significantly improved. On-resistance reduced from 10.3 to 3.5 Ω•mm. Saturation drain current and maximum transconductance increased from 390 to 650 mA/mm and from 130 to 230 mS/mm. Measured transfer curve shows that I/O gain of 4.5 can be obtained at Vdd = 10 V.

scholarly journals Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors

2021 ◽  
Author(s):  
Samaneh Sharbati ◽  
Iman Gharibshahian ◽  
Thomas Ebel ◽  
Ali A. Orouji ◽  
Wulf-Toke Franke
Keyword(s):  
Analytical Model ◽  
Electron Gas ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Dimensional Electron ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
Gan Hemts ◽  
Dimensional Electron Gas ◽  
Recessed Gate

AbstractA physics-based analytical model for GaN high-electron-mobility transistors (HEMTs) with non-recessed- and recessed-gate structure is presented. Based on this model, the two-dimensional electron gas density (2DEG) and thereby the on-state resistance and breakdown voltage can be controlled by varying the barrier layer thickness and Al mole fraction in non-recessed depletion-mode GaN HEMTs. The analytical model indicates that the 2DEG charge density in the channel increases from 2.4 × 1012 cm−2 to 1.8 × 1013 cm−2 when increasing the Al mole fraction from x = 0.1 to 0.4 for an experimental non-recessed-gate GaN HEMT. In the recessed-gate GaN HEMT, in addition to these parameters, the recess height can also control the 2DEG to achieve high-performance power electronic devices. The model also calculates the critical recess height for which a normally-ON GaN switch becomes normally-OFF. This model shows good agreement with reported experimental results and promises to become a useful tool for advanced design of GaN HEMTS.

Electrothermal Analysis of the Field-Plated AlGaN/GaN HEMTs With SiO2 Passivation

2017 ◽  
Author(s):  
Dogacan Kara ◽  
F. Nazli Donmezer Akgun
Keyword(s):  
High Electron Mobility Transistors ◽  
Operating Conditions ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Heating Effects ◽  
Device Reliability ◽  
Significant Research ◽  
Full Capacity ◽  
Gan Hemts ◽  
Power Densities

AlGaN/GaN high electron mobility transistors (HEMTs) are widely used in high frequency and power applications of the space and military industries due to their high RF power densities. When operated in full capacity, reliability of GaN HEMTs drop significantly due to device degradation, electron collapse phenomena, and concentrated heating effects. Although significant research has been done to investigate the effects of passivation, field-plates on the device degradation and the electron collapse separately, combined electrothermal analysis of the field-plates and the SiO2 passivation on GaN HEMTs has not been performed from the perspective of device reliability. For this purpose, electrothermal simulations of the field-plated and non-field-plated devices with different SiO2 passivation thicknesses are performed using Sentaurus TCAD to obtain the electrical field distribution and Joule heating caused temperature distribution in operating devices. Using these results, electrical and thermal effects of the field-plates on the devices with different SiO2 passivation thicknesses are analyzed to obtain the most effective and reliable operating conditions.

DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure

2015 ◽  
Vol 15 (10) ◽  
pp. 7467-7471 ◽  
Author(s):  
Sejun Hong ◽  
Abu ul Hassan Sarwar Rana ◽  
Jun-Woo Heo ◽  
Hyun-Seok Kim
Keyword(s):  
Threshold Voltage ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Positive Direction ◽  
Electron Mobility Transistors ◽  
Gate Structure ◽  
Dual Gate ◽  
Gan Hemts ◽  
Dimensional Electron Gas

Multiple techniques such as fluoride-based plasma treatment, a p-GaN or p-AlGaN gate contact, and a recessed gate structure have been employed to modulate the threshold voltage of AlGaN/GaN-based high-electron-mobility transistors (HEMTs). In this study, we present dual-gate AlGaN/GaN HEMTs grown on a Si substrate, which effectively shift the threshold voltage in the positive direction. Experimental data show that the threshold voltage is shifted from −4.2 V in a conventional single-gate HEMT to −2.8 V in dual-gate HEMTs. It is evident that a second gate helps improve the threshold voltage by reducing the two-dimensional electron gas density in the channel. Furthermore, the maximum drain current, maximum transconductance, and breakdown voltage values of a single-gate device are not significantly different from those of a dual-gate device. For the fabricated single- and dual-gate devices, the values of the maximum drain current are 430 mA/mm and 428 mA/mm, respectively, whereas the values of the maximum transconductance are 83 mS/mm and 75 mS/mm, respectively.

scholarly journals Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 400
Author(s):  
Van Cuong Nguyen ◽  
Kwangeun Kim ◽  
Hyungtak Kim
Keyword(s):  
Gas Sensors ◽  
Performance Optimization ◽  
Response Times ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gate Bias ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Hemts ◽  
Sensing Characteristics

We investigated the sensing characteristics of NO2 gas sensors based on Pd-AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures. In this paper, we demonstrated the optimization of the sensing performance by the gate bias, which exhibited the advantage of the FET-type sensors compared to the diode-type ones. When the sensor was biased near the threshold voltage, the electron density in the channel showed a relatively larger change with a response to the gas exposure and demonstrated a significant improvement in the sensitivity. At 300 °C under 100 ppm concentration, the sensor’s sensitivities were 26.7% and 91.6%, while the response times were 32 and 9 s at VG = 0 V and VG = −1 V, respectively. The sensor demonstrated the stable repeatability regardless of the gate voltage at a high temperature.

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