Noise and Bandwidth analysis for PMOS based wide swing cascode current mirror using 0.35 um CMOS-MEMS technology

2014 ◽  
Author(s):  
M. U. Mian ◽  
J. O. Dennis ◽  
M. H. Md. Khir ◽  
T. B. Tang ◽  
N. Y. Sutri
Keyword(s):  
Current Mirror ◽  
Mems Technology ◽  
Cmos Mems ◽  
Cascode Current Mirror ◽  
Bandwidth Analysis

scholarly journals Design and Simulation of a Low Power Amplifier for CMOS MEMS Sensors Using Wide Swing Cascode Current Mirror

2013 ◽  
Vol 7 (12) ◽  
Author(s):  
Muhammad Umer Mian ◽  
John Ojur Dennis ◽  
M Haris Bin Mohd Khir ◽  
Nebyu Yonas Sutri
Keyword(s):  
Low Power ◽  
Power Amplifier ◽  
Current Mirror ◽  
Mems Sensors ◽  
Cmos Mems ◽  
Cascode Current Mirror

CMOS-MEMS Based Current Mirror MOSFET Embedded Pressure Sensor for Healthcare and Biomedical Applications

2013 ◽  
Vol 647 ◽  
pp. 315-320 ◽  
Author(s):  
Pradeep Kumar Rathore ◽  
Brishbhan Singh Panwar
Keyword(s):  
Pressure Sensor ◽  
Biomedical Applications ◽  
Circuit Simulation ◽  
Applied Pressure ◽  
Pressure Sensors ◽  
Cmos Technology ◽  
Current Mirror ◽  
Sensing Element ◽  
Pressure Sensing ◽  
Cmos Mems

This paper reports on the design and optimization of current mirror MOSFET embedded pressure sensor. A current mirror circuit with an output current of 1 mA integrated with a pressure sensing n-channel MOSFET has been designed using standard 5 µm CMOS technology. The channel region of the pressure sensing MOSFET forms the flexible diaphragm as well as the strain sensing element. The piezoresistive effect in MOSFET has been exploited for the calculation of strain induced carrier mobility variation. The output transistor of the current mirror forms the active pressure sensing MOSFET which produces a change in its drain current as a result of altered channel mobility under externally applied pressure. COMSOL Multiphysics is utilized for the simulation of pressure sensing structure and Tspice is employed to evaluate the characteristics of the current mirror pressure sensing circuit. Simulation results show that the pressure sensor has a sensitivity of 10.01 mV/MPa. The sensing structure has been optimized through simulation for enhancing the sensor sensitivity to 276.65 mV/MPa. These CMOS-MEMS based pressure sensors integrated with signal processing circuitry on the same chip can be used for healthcare and biomedical applications.

Design and analysis of the mechanical structure of a linear micromotor based on CMOS-MEMS technology

2019 ◽  
Author(s):  
Andrea Lopez-Tapia ◽  
Mario Alfredo Reyes-Barranca ◽  
Griselda Stephany Abarca-Jimenez ◽  
Luis Sanchez-Marquez ◽  
Luis Martin Flores-Nava ◽  
...  
Keyword(s):  
Mechanical Structure ◽  
Mems Technology ◽  
Cmos Mems

CMOS-MEMS Integration in Micro Fabry Perot Pressure Sensor Fabrication

2013 ◽  
Vol 64 (3) ◽  
Author(s):  
Nor Hafizah Ngajikin ◽  
Low Yee Ling ◽  
Nur Izzati Ismail ◽  
Abu Sahmah Mohd Supaát ◽  
Mohd Haniff Ibrahim ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Material Selection ◽  
Integrated System ◽  
Oxide Semiconductor ◽  
Deep Reactive Ion Etching ◽  
Sensor Fabrication ◽  
Fabry Perot ◽  
Mems Technology ◽  
Cmos Mems ◽  
Spectrum Shift

Integration of Complimentary Metal-Oxide-Semiconductor (CMOS) and Microelectromechanical System (MEMS) technology in Fabry Perot blood pressure sensor (FPPS) fabrication processes is presented. The sensor that comprises of a 125 µm diameter of circular diaphragm is modeled to be fabricated using integration of CMOS-MEMS technology. To improve the sensor reliability, a sleeve structure is designed at the back of Silicon wafer by using MEMS Deep Reactive ion Etching (DRIE) process for fiber insertion, which offers a large bonding area. Optical light source at 550 nm wavelength is chosen for this device. The sensor diaphragm mechanic deflection and its optical spectrum is theoretically analyzed and simulated. The analytical results show high linear response in the range of 0 to 40 kPa and a reasonable sensitivity of 1.83 nm/kPa (spectrum shift/pressure) has been obtained for this sensor. The proposed integration of CMOS-MEMS technology limit the material selection yet produces an economical method of FPPS fabrication and integrated system.  

Novel Sensor Circuits Design Using Multi-physics Simulation for CMOS-MEMS Technology

2013 ◽  
Author(s):  
T. Konishi ◽  
D. Yamane ◽  
T. Matsushima ◽  
S. Maruyama ◽  
K. Kagaya ◽  
...  
Keyword(s):  
Physics Simulation ◽  
Mems Technology ◽  
Cmos Mems
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