Technology for low gate current AlInAs/InP heterojunction FETs

1993 (5th) International Conference on Indium Phosphide and Related Materials ◽

10.1109/iciprm.1993.380597 ◽

2002 ◽

Author(s):

K. Nait-Zerrad ◽

G. Post ◽

F. Balestra

Keyword(s):

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A Common-Gate Current-Reuse UWB LNA for Wireless Applications in 90 nm CMOS

Wireless Personal Communications ◽

10.1007/s11277-021-08287-5 ◽

2021 ◽

Author(s):

Vikram Singh ◽

Sandeep Kumar Arya ◽

Manoj Kumar

Keyword(s):

Gate Current ◽

Wireless Applications ◽

Current Reuse ◽

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An Adaptive Gate Current Modulator based on Fuzzy PID for Voltage Equalization in Series Connected IGBTs

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) ◽

10.1109/icsict49897.2020.9278250 ◽

2020 ◽

Author(s):

Jia-Li Wan ◽

Ze-Hong Li ◽

Xiao Zeng ◽

Min Ren ◽

Wei Gao ◽

...

Keyword(s):

Fuzzy Pid ◽

Gate Current ◽

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Substrate current, gate current and lifetime prediction of deep-submicron nMOS devices

Solid-State Electronics ◽

10.1016/j.sse.2004.11.020 ◽

2005 ◽

Vol 49 (3) ◽

pp. 505-511 ◽

Author(s):

Zhi Cui ◽

Juin J. Liou ◽

Yun Yue ◽

Hei Wong

Keyword(s):

Deep Submicron ◽

Lifetime Prediction ◽

Gate Current ◽

Substrate Current

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Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.3701164 ◽

2012 ◽

Vol 100 (14) ◽

pp. 143507 ◽

Author(s):

P. Marko ◽

A. Alexewicz ◽

O. Hilt ◽

G. Meneghesso ◽

E. Zanoni ◽

...

Keyword(s):

Electron Mobility ◽

Reverse Bias ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Gate Current ◽

Random Telegraph Signal ◽

Signal Noise ◽

Electron Mobility Transistors

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Power optimal gate current profiles for the slew rate control of Smart Power ICs

IFAC Proceedings Volumes ◽

10.3182/20140824-6-za-1003.00124 ◽

2014 ◽

Vol 47 (3) ◽

pp. 7190-7195

Author(s):

M. Blank ◽

T. Glück ◽

A. Kugi ◽

H-P. Kreuter

Keyword(s):

Rate Control ◽

Slew Rate ◽

Smart Power ◽

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Conditions for Turning on a Thyristor by Short Gate Current Pulses

Physics of p-n Junctions and Semiconductor Devices ◽

10.1007/978-1-4757-1232-2_45 ◽

1971 ◽

pp. 216-223 ◽

Author(s):

A. I. Uvarov

Keyword(s):

Gate Current ◽

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Online junction temperature measurement using peak gate current

2015 IEEE Applied Power Electronics Conference and Exposition (APEC) ◽

10.1109/apec.2015.7104511 ◽

2015 ◽

Author(s):

Nick Baker ◽

Stig Munk-Nielsen ◽

Francesco Iannuzzo ◽

Marco Liserre

Keyword(s):

Temperature Measurement ◽

Junction Temperature ◽

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Voltage gradient limitation of IGBTS by optimised gate-current profiles

2008 IEEE Power Electronics Specialists Conference ◽

10.1109/pesc.2008.4592512 ◽

2008 ◽

Author(s):

G. Schmitt ◽

R. Kennel ◽

J. Holtz

Keyword(s):

Voltage Gradient ◽

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Computationally efficient quantum-mechanical technique to calculate the direct tunneling gate current in metal-oxide-semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1589173 ◽

2003 ◽

Vol 94 (3) ◽

pp. 2046-2052 ◽

Author(s):

M. M. A. Hakim ◽

A. Haque

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Computationally Efficient ◽

Gate Current ◽

Semiconductor Structures ◽

Direct Tunneling

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A new MOSFETs degradation induced by gate current in off-state condition

10.1109/vlsit.1990.111014 ◽

1990 ◽

Author(s):

K. Yoshikawa ◽

N. Arai ◽

S. Mori ◽

Y. Kaneko ◽

Y. Ohshima ◽

...

Keyword(s):

State Condition ◽

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