Ring-gate MOSFET test structures for measuring surface-charge-layer sheet resistance on high-resistivity-silicon substrates

2006 ◽  
Author(s):  
S.B. Evseev ◽  
L.K. Nanver ◽  
S. Milosavljevic
Keyword(s):  
Surface Charge ◽  
Sheet Resistance ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Charge Layer ◽  
Measuring Surface ◽  
High Resistivity Silicon

Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Georgakilas ◽  
M. Fatemi ◽  
L. Fotiadis ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Annealing ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
High Resistivity Silicon

AbstractOne micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.

scholarly journals RF MEMS ohmic switches for matrix configurations

2012 ◽  
Vol 4 (4) ◽  
pp. 421-433 ◽  
Author(s):  
Giorgio De Angelis ◽  
Andrea Lucibello ◽  
Emanuela Proietti ◽  
Romolo Marcelli ◽  
Giancarlo Bartolucci ◽  
...  
Keyword(s):  
Rf Mems ◽  
Coplanar Waveguide ◽  
Building Blocks ◽  
Micro Electro Mechanical System ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Double Pole ◽  
Rf Test ◽  
Clamped Beams ◽  
High Resistivity Silicon

Two different topologies of radio frequency micro-electro-mechanical system (RF MEMS) series ohmic switches (cantilever and clamped–clamped beams) in coplanar waveguide (CPW) configuration have been characterized by means of DC, environmental, and RF measurements. In particular, on-wafer checks have been followed by RF test after vibration, thermal shocks, and temperature cycles. The devices have been manufactured on high resistivity silicon substrates, as building blocks to be implemented in different single-pole 4-throw (SP4 T), double-pole double-throw (DPDT) configurations, and then integrated in Low Temperature Co-fired Ceramics (LTCC) technology for the realization of large-order Clos 3D networks.

High Microwave and Noise Performance of 0.17-<tex>$muhbox m$</tex>AlGaN–GaN HEMTs on High-Resistivity Silicon Substrates

2004 ◽  
Vol 25 (4) ◽  
pp. 167-169 ◽  
Author(s):  
A. Minko ◽  
V. Hoel ◽  
S. Lepilliet ◽  
G. Dambrine ◽  
J.C. DeJaeger ◽  
...  
Keyword(s):  
High Resistivity ◽  
Silicon Substrates ◽  
Noise Performance ◽  
Gan Hemts ◽  
High Resistivity Silicon

Surface-Passivated High-Resistivity Silicon Substrates for RFICs

2004 ◽  
Vol 25 (4) ◽  
pp. 176-178 ◽  
Author(s):  
B. Rong ◽  
J.N. Burghartz ◽  
L.K. Nanver ◽  
B. Rejaei ◽  
M. vanderZwan
Keyword(s):  
High Resistivity ◽  
Silicon Substrates ◽  
High Resistivity Silicon
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