scholarly journals A correlated multiple sampling passive switched capacitor circuit for low light CMOS image sensors

Author(s):  
Assim Boukhayma ◽  
Arnaud Peizerat
Author(s):  
Martin U. Pralle ◽  
C. Vineis ◽  
C. Palsule ◽  
J. Jiang ◽  
J. E. Carey

Sensors ◽  
2019 ◽  
Vol 19 (24) ◽  
pp. 5447
Author(s):  
Calvin Yi-Ping Chao ◽  
Shang-Fu Yeh ◽  
Meng-Hsu Wu ◽  
Kuo-Yu Chou ◽  
Honyih Tu ◽  
...  

In this paper we present a systematic approach to sort out different types of random telegraph noises (RTN) in CMOS image sensors (CIS) by examining their dependencies on the transfer gate off-voltage, the reset gate off-voltage, the photodiode integration time, and the sense node charge retention time. Besides the well-known source follower RTN, we have identified the RTN caused by varying photodiode dark current, transfer-gate and reset-gate induced sense node leakage. These four types of RTN and the dark signal shot noises dominate the noise distribution tails of CIS and non-CIS chips under test, either with or without X-ray irradiation. The effect of correlated multiple sampling (CMS) on noise reduction is studied and a theoretical model is developed to account for the measurement results.


Sensors ◽  
2010 ◽  
Vol 10 (10) ◽  
pp. 9139-9154 ◽  
Author(s):  
Sungho Suh ◽  
Shinya Itoh ◽  
Satoshi Aoyama ◽  
Shoji Kawahito

Electronics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 1096
Author(s):  
Alessandro Michel Brunetti ◽  
Bhaskar Choubey

Extending CMOS Image Sensors’ dynamic range is of fundamental importance in applications, such as automotive, scientific, or X-ray, where a broad variation of incoming light should be measured. The typical logarithmic pixels suffer from poor performance under low light conditions due to a leakage current, usually referred to as the dark current. In this paper, we propose a logarithmic pixel design capable of reducing the dark current through low-voltage photodiode biasing, without introducing any process modifications. The proposed pixel combines a high dynamic range with a significant improvement in the dark response compared to a standard logarithmic pixel. The reported experimental results show this architecture to achieve an almost 35 dB improvement at the expense of three additional transistors, thereby achieving an unprecedented dynamic range higher than 160 dB.


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