Role of inhomogeneous intrinsic point defect distribution on electrical properties in ZnO varistor ceramics

2018 ◽  
Author(s):  
Yuwei Huang ◽  
Kangning Wu ◽  
Zhuang Tang ◽  
Lei Xin ◽  
Jianying Li ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Point Defect ◽  
Intrinsic Point Defect ◽  
Defect Distribution ◽  
Zno Varistor

Enhanced electrical properties of ZnO varistor ceramics by spark plasma sintering: Role of annealing

2020 ◽  
Vol 46 (10) ◽  
pp. 15076-15083 ◽  
Author(s):  
Jie Liang ◽  
Xuetong Zhao ◽  
Jianjie Sun ◽  
Lulu Ren ◽  
Ruijin Liao ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Spark Plasma Sintering ◽  
Zno Varistor ◽  
Plasma Sintering ◽  
Spark Plasma

(Invited) Computer Simulation of Intrinsic Point Defect Distribution Valid for All Pulling Conditions in Large-Diameter Czochralski Si Crystal Growth

2018 ◽  
Vol 86 (10) ◽  
pp. 3-24
Author(s):  
Koji Sueoka ◽  
Yuji Mukaiyama ◽  
Koji Kobayashi ◽  
Hiroaki Fukuda ◽  
Shunta Yamaoka ◽  
...  
Keyword(s):  
Computer Simulation ◽  
Crystal Growth ◽  
Point Defect ◽  
Large Diameter ◽  
Intrinsic Point Defect ◽  
Defect Distribution

The Role of Carbon and Point Defects in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
U. Gösele
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Carbon Concentration ◽  
Diffusion Mechanism ◽  
Intrinsic Point Defect ◽  
Interstitial Carbon ◽  
Frame Work ◽  
Co Precipitation ◽  
And Diffusion

ABSTRACTAn overview of the behavior of intrinsic point defects in silicon and their interaction with carbon is given for temperatures above about 500° C. The diffusive mechanism of carbon in silicon, which involves silicon self-interstitials, is treated in some detail and compared with the diffusion mechanism of oxygen. The solubility of interstitial carbon is estimated. Co-precipitation of carbon and self-interstitials or oxygen are dealt with in terms of simple volume considerations. It is proposed that the contradicting results on the influence of intrinsic point defect supersaturations on oxygen nucleation and precipitation may possibly be explained in the frame-work of opposite effects depending on the carbon concentration. Finally the influence of carbon on the incorporation and diffusion of gold in silicon is discussed.

Electrical properties of planar AlGaN/GaN Schottky diodes: Role of 2DEG and analysis of non-idealities

2017 ◽  
Vol 121 (13) ◽  
pp. 135701 ◽  
Author(s):  
Anna Persano ◽  
Iolanda Pio ◽  
Vittorianna Tasco ◽  
Massimo Cuscunà ◽  
Adriana Passaseo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Diodes

Role of Bi chemical pressure on electrical properties of BiFeO3–BaTiO3–based ceramics

2021 ◽  
Vol 114 ◽  
pp. 106562
Author(s):  
Tauseef Ahmed ◽  
Salman Ali Khan ◽  
JiHee Bae ◽  
Muhammad Habib ◽  
Fazli Akram ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Chemical Pressure

Dependence of the properties of Cd1−x ZnxTe crystals on the type of intrinsic point defect formed by oxygen

1999 ◽  
Vol 33 (5) ◽  
pp. 531-535
Author(s):  
N. K. Morozova ◽  
I. A. Karetnikov ◽  
V. V. Blinov ◽  
V. K. Komar ◽  
V. G. Galstan ◽  
...  
Keyword(s):  
Point Defect ◽  
Intrinsic Point Defect
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