Analytical Model for Surface Electrical Field of Double RESURF LDMOS with Field Plate

2006 ◽  
Author(s):  
Shan Gao ◽  
Junning Chen ◽  
Daoming Ke ◽  
Lei Liu
Keyword(s):  
Analytical Model ◽  
Electrical Field ◽  
Field Plate

Physics-Based 2-D Analytical Model for Field-Plate Engineering of AlGaN/GaN Power HFET

2019 ◽  
Vol 66 (1) ◽  
pp. 116-125 ◽  
Author(s):  
Tao Chen ◽  
Qi Zhou ◽  
Dong Wei ◽  
Changxu Dong ◽  
Wanjun Chen ◽  
...  
Keyword(s):  
Analytical Model ◽  
Field Plate

An Analytical Model for Field-Plate Optimization in High Electron Mobility Transistor

2012 ◽  
Vol 529 ◽  
pp. 33-36
Author(s):  
Qian Luo ◽  
Jiang Feng Du ◽  
Xiang Wang ◽  
Ning Ning ◽  
Yang Liu ◽  
...  
Keyword(s):  
Analytical Model ◽  
Electron Mobility ◽  
Potential Distribution ◽  
High Electron Mobility Transistor ◽  
Critical Parameters ◽  
Physical Parameters ◽  
High Electron ◽  
High Electron Mobility ◽  
Field Plate ◽  
Gan Hemt

An analytical model for field-plate (FP) optimization in high electron mobility transistor (HEMT) is reported. With the potential distribution in device’s channel being modeled in terms of physical parameters, the two critical parameters of FP, i.e., the insulator thickness and the FP length, are optimized respectively. Using the model, the optimization of the FP structure in a typical undoped AlGaN/GaN HEMT is described in detail.

scholarly journals Analytical modeling of reservoir effect on electromigration in Cu interconnects

2007 ◽  
Vol 22 (1) ◽  
pp. 152-156 ◽  
Author(s):  
Zhenghao Gan ◽  
A.M. Gusak ◽  
W. Shao ◽  
Zhong Chen ◽  
S.G. Mhaisalkar ◽  
...  
Keyword(s):  
Analytical Model ◽  
Analytical Modeling ◽  
Interface Energy ◽  
Design Guidelines ◽  
Void Size ◽  
Electrical Field ◽  
Electrical Field Gradient ◽  
Damascene Interconnects ◽  
Extension Length ◽  
Electron Wind

Electromigration (EM) in Cu dual-damascene interconnects with extensions (also described as overhangs or reservoirs) ranging from 0 to 120 nm in the upper metal (M2) was investigated by an analytical model considering the work of electron wind and surface/interface energy. It was found that there exists a critical extension length beyond which increasing extension lengths ceases to prolong electromigration lifetimes. The critical extension length is a function of void size and electrical field gradient. The analytical model agrees very well with existing experimental results. Some design guidelines for electromigration-resistant circuits could be generated by the model.

Physics-Based Analytical Model for Input, Output, and Reverse Capacitance of a GaN HEMT With the Field-Plate Structure

2017 ◽  
Vol 32 (3) ◽  
pp. 2189-2202 ◽  
Author(s):  
Dejana Cucak ◽  
Miroslav Vasic ◽  
Oscar Garcia ◽  
Jesus Angel Oliver ◽  
Pedro Alou ◽  
...  
Keyword(s):  
Analytical Model ◽  
Input Output ◽  
Plate Structure ◽  
Field Plate ◽  
Gan Hemt
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